Substrate treatment device

Abstract

It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.

1 . A substrate treatment device at least using a Si-containing gas and a Cl 2  gas and alternately supplying the Si-containing gas and the Cl 2  gas to a treatment chamber for selectively growing an epitaxial film on a surface of a substrate housed in the treatment chamber, comprising:
 a substrate support member which supports the substrate in the treatment chamber;   a heating member provided outside the treatment chamber which heats the substrate and an atmosphere of the treatment chamber;   a gas supply system provided inside the treatment chamber; and   a discharge port opened on the treatment chamber, wherein:   the gas supply system comprises a first gas supply member which supplies the Si-containing gas and a second gas supply member which supplies the Cl 2  gas, the second gas supply member being different from the first gas supply member; and   each of the first gas supply member and the second gas supply member comprises a plurality of gas supply nozzles which separately supply the Si-containing gas and the Cl 2  gas to a plurality of different parts of the treatment chamber.   
   
   
       2 . The substrate treatment device according to  claim 1 , wherein the Si-containing gas is SiH 4 , Si 2 H 6 , or SiH 2 Cl 2 . 
   
   
       3 . The substrate treatment device according to  claim 1 , wherein the epitaxial film is any one of a Si film or a SiGe film. 
   
   
       4 . The substrate treatment device according to  claim 3 , wherein the SiGe film is formed by using, in addition to the Si-containing gas, a Ge-containing gas of which Ge is GeH 4  or GeCl 4 . 
   
   
       5 . The substrate treatment device according to  claim 1 , wherein a purge gas is supplied to the second gas supply member when supplying the Si-containing gas, and the purge gas is supplied to the first gas supply member when supplying the Cl 2  gas. 
   
   
       6 . The substrate treatment device according to  claim 5 , wherein the purge gas is H 2 . 
   
   
       7 . A substrate treatment device at least using a Si-containing gas and a Cl 2  gas for selectively growing an epitaxial film on a surface of a substrate housed in the treatment chamber, comprising:
 a gas supply system provided inside the treatment chamber and comprising a plurality of first gas supply nozzles having gas supply apertures opened at a plurality of different heights of the treatment chamber and a plurality of second gas supply nozzles having gas supply apertures opened at a plurality of different heights of the treatment chamber;   a discharge port opened on the treatment chamber; and   a control system which controls at least the gas supply system, wherein:   the control system controls the gas supply system in such a manner that at least the Si-containing gas is supplied from the first gas supply nozzles to the treatment chamber and at least the Cl-containing gas is supplied from the second gas supply nozzles to the treatment chamber.   
   
   
       8 . The substrate treatment device according to  claim 7 , wherein the control system controls the gas supply system in such a manner that a purge gas is supplied to the second gas supply nozzles when supplying the Si-containing gas and the purge gas is supplied to the first gas supply nozzles when supplying the Cl-containing gas. 
   
   
       9 . The substrate treatment device according to  claim 8 , wherein the purge gas is H 2 . 
   
   
       10 . The substrate treatment device according to  claim 9 , wherein the heights of the treatment chamber at which the gas supply apertures of the first gas supply nozzles are opened are identical with the heights of the treatment chamber at which the gas supply apertures of the second gas supply nozzles are opened. 
   
   
       11 . A selective epitaxial film growth method for selectively growing an epitaxial film on a surface of a substrate housed in a treatment chamber in a substrate treatment device comprising a plurality of first gas supply nozzles for supplying at least a Si-containing gas to a plurality of different parts of the treatment chamber and a plurality of second gas supply nozzles for supplying at least a Cl-containing gas to a plurality of different parts of the treatment chamber, at least comprising:
 supplying at least the Si-containing gas to the treatment chamber by using the first gas supply nozzles;   evacuating an atmosphere of the treatment chamber by stopping the Si-containing gas supply;   supplying a purge gas to the treatment chamber by using the first gas supply nozzles and the second gas supply nozzles;   supplying the Cl-containing gas at least as an etching gas to the treatment chamber by using the second gas supply nozzles;   evacuating an atmosphere of the treatment chamber by stopping the Cl-containing gas supply; and   supplying the purge gas to the treatment chamber by using the first gas supply nozzles and the second gas supply nozzles, the steps being repeated for growing the film to a desired thickness.