Interconnects with Direct Metalization and Conductive Polymer

Abstract

Embodiments include an interconnect or trace of electrically conductive material with a contact surface, and a dielectric layer overlying the contact surface with a via formed on the dielectric layer and to the contact surface. The via sidewalls and perimeter are layered with a manganese oxide (MnO 2 ) layer which is layered over with a conductive polymer material. An interconnect material is formed in the via and in a trench above the perimeter of the via such that the interconnect material is on the conductive polymer material and contacts the contact surface. An additional dielectric layer may be formed over the interconnect material and an additional via may be formed therethrough so that an additional structure having a MnO 2 layer, conductive polymer material, and interconnect material can be formed in the additional via and to the interconnect material.

1 . An apparatus comprising:
 a dielectric material overlying a circuit device, the circuit device comprising an electrolytic plating of an electrically conductive material and a contact surface, the dielectric material having a via opening having a plurality of via sidewalls to the contact surface;   a manganese oxide (MnO2) layer on the plurality of via sidewalls but not on the contact surface;   a conductive polymer material on the manganese oxide layer but not on the contact surface; and   an electrolytic metal to electrolytic metal adhesion between the interconnect material and the electrically conductive material.   
   
   
       2 . The apparatus of  claim 1 , wherein the manganese oxide (MnO2) layer includes an oxidized thickness of the dielectric material on the via sidewalls. 
   
   
       3 . The apparatus of  claim 1 , wherein the conductive polymer material includes a conformally deposited and polymerized layer of a solid conductive polymer material on the MnO2 layer. 
   
   
       4 . The apparatus of  claim 1 , wherein the conductive polymer material comprises one of Pyrrol and Thiophene. 
   
   
       5 . The apparatus of  claim 1 , wherein the dielectric material is a first dielectric material and overlies a second dielectric material and the circuit device 
   
   
       6 . The apparatus of  claim 5 , wherein the circuit device comprises one of an electrically conductive trace, an interconnect structure, and an interconnection line. 
   
   
       7 . The apparatus of  claim 1 , wherein the manganese oxide layer has a thickness of between 0.01 μm and 1 μm, the conductive polymer material has a thickness of between 0.1 μm and 10 μm, and the interconnect material has a thickness of between 10 μm and 60 μm. 
   
   
       8 . The apparatus of  claim 6 , wherein the electrically conductive material and the interconnect material are each an electrolytic conductive plating of a same material including one of a metal, a copper, an aluminum, a nickel. 
   
   
       9 . The apparatus of  claim 6 , wherein the electrically conductive material and the first interconnect material have a same grain structure, mechanical properties, and thermal properties. 
   
   
       10 . The apparatus of  claim 6 , wherein the dielectric material is a first dielectric material on a second dielectric material and the circuit device, further comprising:
 a third dielectric material overlying the first dielectric material, the third dielectric material having a trench opening having an opening size that is larger than an opening size of the via opening and having a location such that the trench opening defines a trench base on the first dielectric material around a perimeter of the via opening,   wherein the manganese oxide layer and the conductive polymer material extend onto the trench base.   
   
   
       11 . The apparatus of  claim 10 , wherein the second dielectric material and the third dielectric material are each one of an anjinomoto build up film (ABF), an epoxy, a resin, an epoxy resin, a epoxy/phenol novolac resin, a epoxy-acrylate photosensitive, and a thermoset cycloolefin/epoxy resin. 
   
   
       12 . The apparatus of  claim 10 , wherein the dielectric material is a first dielectric material on a second dielectric material and the circuit device, further comprising: a second interconnect material in the trench opening, on the trench base, on the conductive polymer material, and to the first interconnect material. 
   
   
       13 . The apparatus of  claim 12 , wherein the electrically conductive material, the first interconnect material, and the second interconnect material are an electrolytic conductive plating of a same material including one of a metal, a copper, an aluminum, a nickel, and are each an electrolytic conductive plating of a material having a same grain structure, mechanical properties, and thermal properties. 
   
   
       14 . The apparatus of  claim 1 , wherein the electrically conductive material and the interconnect material comprise a continuous electrolytic material stack having a same grain structure, mechanical properties, and thermal properties. 
   
   
       15 . The apparatus of  claim 1  wherein electrolytic plating and the interconnect material comprises using a similar type of plating as the conductive material. 
   
   
       16 . The apparatus of  claim 15  wherein the electrically conductive material and the interconnect material form a continuous electrolytic material stack of electrolytic metal, copper, aluminum or nickel. 
   
   
       17 . An apparatus comprising:
 a first dielectric material having a circuit device, the circuit device comprising an electrolytic plating of an electrically conductive material and a contact surface;   a second dielectric material overlying the circuit device and the first dielectric material, the second dielectric material having a first opening having a plurality of first sidewalls to the contact surface;   a first manganese oxide (MnO2) layer on the plurality of first sidewalls but not on the contact surface;   a first conductive polymer material on the first manganese oxide layer but not on the contact surface;   electrolytic plating of a first interconnect material in the first opening, on the first conductive polymer material, and to the contact surface;   a third dielectric material overlying the second dielectric material, the third dielectric material having a second opening including a plurality of second sidewalls to the first interconnect material;   a second manganese oxide layer on the plurality of second sidewalls but not on the first interconnect material;   a second conductive polymer material on the second manganese oxide layer but not on the first interconnect material;   an electrolytic plating of a second interconnect material in the second opening, on the second conductive polymer material, and to the first interconnect material.   
   
   
       18 . The apparatus of  claim 17 , further comprising:
 a first electrolytic metal to electrolytic metal adhesion between the first interconnect material and the electrically conductive material; and a second electrolytic metal to electrolytic metal adhesion between the second interconnect material and the first interconnect material.   
   
   
       19 . The apparatus of  claim 17 , wherein the first dielectric material is one of a hydrocarbon/ceramic filler/woven glass fiber, a thermoset polyester/woven glass fiber, a polyphenylene oxide (PPO)+special resin/woven glass fiber, a bismaleimide triazine (BT)/epoxy resin/expand PolyTetraFluoroEthylene (PTFE), an epoxy resin/filler/expand PTFE; wherein the second dielectric material and the third dielectric material are each a same material including one of an anjinomoto build up film (ABF), an epoxy, a resin, an epoxy resin, a epoxy/phenol novolac resin, a epoxy-acrylate photosensitive, and a thermoset cycloolefin/epoxy resin; and wherein the first conductive polymer material and the second conductive polymer material are each a same material including one of Pyrrol and Thiophene. 
   
   
       20 . The apparatus of  claim 17 , wherein the electrically conductive material, the first interconnect material, and the second interconnect material are each an electrolytic conductive plating of a same material including one of a metal, a copper, an aluminum, a nickel. 
   
   
       21 . The apparatus of  claim 17 , wherein the first and second interconnect material comprise a continuous electrolytic material stack having a same grain structure, mechanical properties, and thermal properties. 
   
   
       22 . The apparatus of  claim 21  wherein the first and second interconnect material form a continuous electrolytic material stack of electrolytic metal, copper, aluminum or nickel.