Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device having a semiconductor substrate, at least one of a protruding electrode and wiring formed on one surface of the semiconductor substrate, and a first resin film formed on this surface. The first resin film has elasticity low enough to reduce stress induced by a difference in thermal expansion coefficient between the semiconductor substrate and the first resin film. A second resin film, having higher elasticity or higher strength than the first resin film, may be formed on the other surface of the semiconductor substrate.

1 - 2 . (canceled) 
   
   
       3 . A semiconductor device, comprising:
 a semiconductor substrate divided from a semiconductor wafer;   at least one of a protruding electrode and wiring formed on one surface of the semiconductor substrate; and   a first resin film formed on the one surface of the semiconductor substrate,   wherein the first resin film has elasticity low enough to reduce stress induced by a difference in thermal expansion coefficient between the semiconductor substrate and the first resin film, and   wherein a second resin film having one of higher elasticity and higher strength than the first resin film is formed on the other surface of the semiconductor substrate.   
   
   
       4 . The semiconductor device according to  claim 3 , wherein an elastic modulus of the second resin film is 15 GPa or higher. 
   
   
       5 . (canceled) 
   
   
       6 . The semiconductor device according to  claim 3 , wherein the semiconductor substrate has a thickness of 200 μm or less and is placed at a center of the semiconductor device in a thickness direction of a cross section thereof. 
   
   
       7 - 10 . (canceled) 
   
   
       11 . The semiconductor device according to  claim 3 , wherein the semiconductor substrate has a thickness of 550 μm or less. 
   
   
       12 . A semiconductor device, comprising:
 a semiconductor substrate;   a protruding electrode formed on one surface of the semiconductor substrate; and   a first resin film formed on the one surface of the semiconductor substrate so that the protruding electrode protrudes through the first resin film,   wherein the first resin film has elasticity low enough to reduce stress induced by a difference in thermal expansion coefficient between the semiconductor substrate and the first resin film, and   wherein a second resin film having one of higher elasticity and higher strength than the first resin film is formed on the other surface of the semiconductor substrate.   
   
   
       13 . The semiconductor device according to  claim 12 , wherein the semiconductor substrate is divided from a semiconductor wafer.