semiconductor integrated circuit device and a method of manufacturing the same

Abstract

In order to improve the soft error resistance of a memory cell of an SRAM without increasing its chip size in deep through-holes formed by perforating a silicon oxide film, there is a silicon nitride film and a silicon oxide film, a capacitor element having a TIN film serving as a lower electrode. This capacitor element is connected between a storage node and a supply voltage line, between a storage node and a reference voltage line, or between storage nodes of the memory cell of the SRAM.

1 . A semiconductor integrated circuit device comprising:
 a first insulating film formed over a substrate;   first openings formed in the first insulating film; and   a capacitor element having a first conductive film formed along sidewalls and bottoms of the first openings, a second insulating film formed over the first conductive film formed over the sidewalls and the bottoms of the first openings;   wherein:
 the first conductive film functions as a lower electrode, 
 the second insulating film functions as a capacitor insulating film, and 
 the second conductive film functions as a upper electrode. 
   
     
     
         2 . The semiconductor integrated circuit device according to  claim 1 , further comprising:
 a third insulating film formed over the second conductive film and fills in the first openings.   
     
     
         3 . The semiconductor integrated circuit device according to  claim 2 , wherein:
 wiring trenches are formed in the first insulating film,   wiring lines fill the wiring trenches, and   the third insulating film is formed over the wiring lines.   
     
     
         4 . The semiconductor integrated circuit device according to  claim 2 , wherein:
 third openings are formed in the first insulating film,   plugs fill the third openings, and   the third insulating film is formed over the wiring lines.   
     
     
         5 . The semiconductor integrated circuit device according to  claim 1 , wherein the capacitor element constitutes an analog circuit.