Plasma processing apparatus

Abstract

The plasma processing apparatus M 2 has a first and a second elongate electrodes 30, 30 . A processing gas is introduced from a first aperture formed between upper first edges of the electrodes 30, 30 into a gap 30 a between the electrodes 30, 30 . An electric field is applied and a plasma is generated between the electrodes 30, 30 . The processing gas is blown-off from the gap 30 a through a second aperture formed between lower second edges of the electrodes 30, 30 . An insulative spacer 60 is disposed in the gap 30 a so as to be interposed between the electrodes 30, 30 substantially at an intermediate section in the longitudinal direction of the electrodes 30, 30 . The spacer 60 prevents the electrodes 30, 30 from being deformed to narrow the gap 30 a between the electrodes 30, 30 due to the Coulomb force, etc.

1 .- 6 . (canceled) 
   
   
       7 . A plasma processing apparatus for plasmatizing processing gas in an electric filed and then blowing it out, said plasma processing apparatus comprising:
 a first and a second electrodes each extending in a first direction and opposed in a second direction orthogonal to the first direction, each of said electrodes having a first and a second edges each elongated in said first direction and distant from each other in a third direction crossing both the first and the second directions, wherein;
 said electric field is applied between said first and second electrodes, 
 a first aperture formed between said first edges, said processing gas being received from said first aperture into a gap between said electrodes, 
 a second aperture formed between said second edges, said processing gas being blown off from said gap through said second aperture; and 
   an insulative spacer disposed in said gap so as to be interposed between said electrodes substantially at an intermediate section in the longitudinal direction of said electrodes.   
   
   
       8 . The plasma processing apparatus according to  claim 7 , wherein said spacer is so small that an adverse effect given to the processing gas flow by said spacer can be disregarded. 
   
   
       9 . The plasma processing apparatus according to  claim 7 , wherein said spacer is arranged nearer said first aperture than said second aperture. 
   
   
       10 . The plasma processing apparatus according to  claim 9 , wherein said spacer is formed with a gas guiding part that guides the processing gas round toward a space between said spacer and said second aperture. 
   
   
       11 . The plasma processing apparatus according to  claim 10 , wherein opposite edges of said spacer in the first direction are slanted in such a manner as to approach each other, toward the second aperture, and said slanted edges serve as said gas guiding part. 
   
   
       12 . The plasma processing apparatus according to  claim 7 , wherein further comprises an insulative cover that covers a side surface on said first edge of said first electrode, and said spacer has a protruding part protruding outwardly from said first aperture, and said protruding part can be fixed to said insulative cover. 
   
   
       13 . The plasma processing apparatus according to  claim 7 , wherein said spacer integrally includes an insertion part inserted in said gap and a straddle part straddling said first edges of said first and second electrodes. 
   
   
       14 .- 18 . (canceled) 
   
   
       19 . The plasma processing apparatus according to  claim 7 , further comprising an insulative cover that covers a side surface on said first edge of said first electrode,
 said insulative cover including a cover main body formed of an insulative material and a plasma-proof member which is formed of an insulative material which is higher in plasma-proof property than said cover main body, and   said plasma-proof member including a formation surface of a processing gas introducing hole which is continuous with said first aperture and an abutment surface contacted with said side surface on the first edge of said first electrode, said plasma-proof member extending in the first direction as in parallel with said electrodes.   
   
   
       20 . The plasma processing apparatus according to  claim 7 , further comprising a gas introducing device for introducing said processing gas from a processing gas source to said first aperture, the gas introducing device comprising:
 a pair of uniformizing passages that leak said processing gas to an outside space of said passage from a substantially entire length of a peripheral part while substantially equal amounts of said processing gas each flow in the mutually opposing directions along the first direction; and   plural-stage uniformizing chambers elongated along the first direction and communicated with each other through a communication passage, wherein:
 a first-stage chamber of said plural-stage uniformizing chambers constitutes said outside space of said pair of uniformizing passages, 
 said communication passage is in the form of an elongate slit extending over a substantially entire length of a front and a rear stage chamber of said plural-stage uniformizing chambers which are in communication with each other, or in the form of a plurality of spots which are arranged at short intervals over the substantially entire length, and 
 a final stage chamber of said plural-stage uniformizing chambers being continuous with a substantially entire length of said processing gas receiving aperture of said electrodes. 
   
   
   
       21 . The plasma processing apparatus according to  claim 20 , wherein said gas introducing device includes a device main body having an elongate container configuration and extending in the first direction,
 said gas introducing device main body receiving therein a member which constitutes said pair of uniformizing passages,   a space within said device main body on the opposite side to said electrodes of said uniformizing passages constituting member being provided as said first-stage chamber,   a space within said device main body on the side of said electrodes being provided as said final stage chamber, and   a small gap being formed between said device main body and a side part of said uniformizing passages constituting member, said gap being provided as said communication passage which is in the form of a slit.   
   
   
       22 . The plasma processing apparatus according to  claim 21 , wherein said uniformizing passages constituting member includes a pair of pipes extending in the first direction,
 one end part of one of said pipes and the other end part of the other pipe each serving as a processing gas inlet port, and   a leakage hole communicating with said first-stage chamber being formed in a tubular wall of each pipe over a general substantially entire length thereof.   
   
   
       23 . The plasma processing apparatus according to  claim 20 , wherein said processing gas is repeatedly diverged and converged, and after being bent plural times, said processing gas is introduced to said uniformizing passages. 
   
   
       24 . The plasma processing apparatus according to  claim 20 , wherein said gas introducing device and a holder for supporting said pair of electrodes are integrally connected each other.