US2008128088A1PendingUtilityA1

Etching apparatus for edges of substrate

Assignee: JUSUNG ENG CO LTDPriority: Oct 30, 2006Filed: Oct 29, 2007Published: Jun 5, 2008
Est. expiryOct 30, 2026(~0.3 yrs left)· nominal 20-yr term from priority
H10P 72/0421H10P 50/242H01J 37/32623H01J 2237/334
35
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Claims

Abstract

An etching apparatus comprises a chamber; a substrate supporter in the chamber; a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone; a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate; a gas injection means supplying gases onto a periphery of the substrate; and a power supply unit supplying an RF (radio frequency) power into the chamber.

Claims

exact text as granted — not AI-modified
1 . An etching apparatus, comprising:
 a chamber;   a substrate supporter in the chamber;   a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone;   a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate;   a gas injection means supplying gases onto a periphery of the substrate; and   a power supply unit supplying an RF (radio frequency) power into the chamber.   
   
   
       2 . The apparatus according to  claim 1 , wherein the substrate-screening unit comprises:
 a first body; and   a second body having the first diameter greater than a diameter of the first body,   wherein the portion of the substrate-screening unit is formed at a side of the second body.   
   
   
       3 . The apparatus according to  claim 2 , wherein the first and second bodies are integrated as a single body. 
   
   
       4 . The apparatus according to  claim 1 , wherein when the substrate has the notch zone, the portion of the substrate-screening unit has a greater width and a smaller depth than the notch zone. 
   
   
       5 . The apparatus according to  claim 1 , wherein when the substrate has the notch zone, the portion of the substrate-screening unit has a smaller width and a smaller depth than the notch zone. 
   
   
       6 . The apparatus according to  claim 1 , wherein the gas injection means is disposed on an upper side of the chamber to seal up the chamber, and the substrate-screening unit protrudes from the gas injection means toward the substrate. 
   
   
       7 . The apparatus according to  claim 6 , wherein the gas injection means includes a plurality of gas injection holes disposed at sides of the substrate-screening unit. 
   
   
       8 . The apparatus according to  claim 1 , wherein the gas injection means is movable up and down. 
   
   
       9 . The apparatus according to  claim 1 , wherein the substrate supporter has a third diameter smaller than the second diameter. 
   
   
       10 . The apparatus according to  claim 9 , wherein the third diameter is smaller than or equal to the first diameter.

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