Semiconductor device including a discontinuous film and method for manufacturing the same

Abstract

Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.

1 .- 4 . (canceled) 
   
   
       5 . A method for manufacturing a semiconductor device comprising:
 forming a recess in a first insulating film formed above a semiconductor substrate;   burying Cu wiring in the recess of the first insulating film with a barrier metal being interposed therebetween;   treating the semiconductor substrate having the Cu wiring formed thereabove with an aqueous solution of metal soap containing at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn and drying the aqueous solution of metal soap to form a continuous film containing an oxide of the metal and an organic compound on the Cu wiring; and   forming a second insulating film above the Cu wiring while removing the organic compound from the continuous film to turn the continuous film into a discontinuous film.   
   
   
       6 . The method according to  claim 5 , wherein the aqueous solution of metal soap contains a metal soap at a concentration of 0.005-0.5% by weight. 
   
   
       7 . The method according to  claim 5 , wherein the aqueous solution of metal soap further contains an organic acid. 
   
   
       8 . The method according to  claim 5 , further comprising hydrophilizing the surface of the first insulating film prior to treating the semiconductor substrate with an aqueous solution of metal soap. 
   
   
       9 . The method according to  claim 5 , further comprising washing a surface of Cu wiring with an aqueous solution of organic acid prior to treating the semiconductor substrate with an aqueous solution of metal soap. 
   
   
       10 . The method according to  claim 5 , wherein the second insulating film is formed of SiN, SiO or SiCN. 
   
   
       11 . The method according to  claim 5 , wherein the oxide of the metal is reduced on the occasion of forming the second insulating film or before or after forming the second insulating film. 
   
   
       12 . The method according to  claim 11 , wherein the reduction of the oxide of the metal is performed by the irradiation of an electron beam in a reducing atmosphere or in a vacuum. 
   
   
       13 . A method for manufacturing a semiconductor device comprising:
 forming a recess in a first insulating film formed above a semiconductor substrate;   burying Cu wiring in the recess of the first insulating film with a barrier metal being interposed therebetween;   treating the semiconductor substrate having the Cu wiring formed thereabove with an aqueous solution of metal soap containing at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn and drying the aqueous solution of metal soap to form a continuous film containing an oxide of the metal and an organic compound on the Cu wiring;   removing the organic compound from the continuous film to turn the continuous film into a discontinuous film; and   forming a second insulating film above the Cu wiring having the discontinuous film formed thereon,   wherein, throughout the process of removing the organic compound from the continuous film and forming the second insulating film, an atmosphere thereof is maintained in a reducing atmosphere or in a vacuum.   
   
   
       14 . The method according to  claim 13 , wherein the aqueous solution of metal soap contains a metal soap at a concentration of 0.005-0.5% by weight. 
   
   
       15 . The method according to  claim 13 , wherein the aqueous solution of metal soap further contains an organic acid. 
   
   
       16 . The method according to  claim 13 , further comprising hydrophilizing the surface of the first insulating film prior to treating the semiconductor substrate with an aqueous solution of metal soap. 
   
   
       17 . The method according to  claim 13 , further comprising washing a surface of Cu wiring with an aqueous solution of organic acid prior to treating the semiconductor substrate with an aqueous solution of metal soap. 
   
   
       18 . The method according to  claim 13 , wherein the second insulating film is formed of SiN, SiO or SiCN. 
   
   
       19 . The method according to  claim 13 , wherein the oxide of the metal is reduced on the occasion of forming the second insulating film or before or after forming the second insulating film. 
   
   
       20 . The method according to  claim 19 , wherein the reduction of the oxide of the metal is performed by the irradiation of an electron beam in a reducing atmosphere or in a vacuum.