Interconnect For Microelectronic Structures With Enhanced Spring Characteristics
Abstract
An interconnection element and a-method of forming an interconnection element. In one embodiment, the interconnection element includes a first structure and a second structure coupled to the first structure. The second structure coupled with the first material has a spring constant greater than the spring constant of the first structure alone. In one embodiment, the interconnection element is adapted to be coupled to an electronic component tracked as a conductive path from the electronic component. In one embodiment, the method includes forming a first (interconnection) structure coupled to a substrate to define a shape suitable as an interconnection in an integrated circuit environment and then coupling, such as by coating, a second (interconnection) structure to the first (interconnection) structure to form an interconnection element. Collectively, the first (interconnection) structure and the second (interconnection) structure have a spring constant greater than a spring constant of the first (interconnection) structure.
Claims
exact text as granted — not AI-modified1 - 32 . (canceled)
33 . A method, comprising:
creating a free-standing first structure of a first material having a first spring constant and a base coupled to a first substrate and a free end extending over a portion of the first substrate; patterning a masking material over the first substrate to have an opening to the free-standing first structure formed on the first substrate; coating a second structure on to the first structure through the opening to increase the spring constant of a resulting combined first and second structure; and removing the masking material.
34 . The method of claim 33 , wherein creating the free-standing first structure further comprises releasing the free end from the first substrate to form a cantilever.
35 . The method of claim 33 , further comprising:
coating less than the entire portion of the second structure with an insulating material and coating the insulating material with a conductive material that is patterned to a signal line.
36 . The method of claim 33 , further comprising transferring the combined first and second structure to a second substrate.
37 . The method of claim 33 , wherein the masking material is an electrophoretic resist.
38 . The method of claim 33 , wherein the first spring constant is sufficient for repeated elastic displacement of the first structure without substantial plastic deformation of the first structure.
39 . The method of claim 33 , further comprising using the combined first and second structure to test an electronic component.Join the waitlist — get patent alerts
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