Set-up method for cmp process

Abstract

A method of performing a chemical mechanical polishing (CMP) process is disclosed and includes; detecting a removal rate profile for a material layer formed on a wafer, converting the detected material layer removal rate profile into a condition effect profile for a predetermined section of the wafer, monitoring the converted condition effect profile, simulating the condition effect profile by defining input control parameters in response to the monitoring of the converted effect profile, applying the input control parameters as one or more process set-up conditions, as required by the monitored condition effect profile, and performing polishing and conditioning according to the input process set-up conditions.

1 . A method of performing a chemical mechanical polishing (CMP) process, comprising:
 detecting a removal rate profile for a material layer formed on a wafer;   converting the detected material layer removal rate profile into a condition effect profile for a predetermined section of the wafer;   monitoring the converted condition effect profile;   simulating the condition effect profile by defining input control parameters in response to the monitoring of the converted effect profile;   applying the input control parameters as one or more process set-up conditions, as required by the monitored condition effect profile; and   performing polishing and conditioning according to the input process set-up conditions.   
   
   
       2 . The set-up method according to  claim 1 , wherein the material layer removal rate profile for the wafer is defined in part by the thickness distribution of the material layer across the surface of the wafer. 
   
   
       3 . The set-up method according to  claim 1 , wherein the input control parameters are related to a simulation established to regulate at least one of the rotational speed of a polishing pad, rotational speed of a conditioning disc, sweep speed of the conditioning disc and movement condition of the conditioning disc, rotational speed of the wafer, sweep speed of the wafer and movement condition of the wafer, and distance between the conditioning disc and the wafer. 
   
   
       4 . The set-up method according to  claim 3 , wherein the input control parameters are defined in relation to the rotational speed of the polishing pad, rotational speed of the conditioning disc, sweep speed and the movement condition of the conditioning disc, rotational speed of the wafer, sweep speed and the movement condition of the wafer, and distance between the conditioning disc and the wafer. 
   
   
       5 . The set-up method according to  claim 1 , wherein the material layer removal rate profile for the wafer is divided into a plurality of regions, and wherein the polishing and conditioning are monitored and regulated in relation to each one of the plurality of regions.