Thin-film forming method, thin-film forming apparatus, and multilayer film

Abstract

A thin-film forming method and a thin-film forming apparatus can suppress the oxidization of a magnetic layer composed of a non-oxide material when a film of oxide is formed on the magnetic layer by sputtering that is suited to mass production. A multilayer film with a low RA value can be produced by such method and apparatus. A thin-film forming method that forms a thin film of oxide on the surface of a substrate by dispersing the oxide inside a chamber includes an enclosing step of enclosing the substrate in the chamber and an adsorbing step of adsorbing excess oxygen present inside the chamber by providing an adsorption unit, which adsorbs oxygen, inside the chamber.

1 . A thin-film forming method of forming a thin film of oxide on a surface of a substrate by dispersing the oxide inside a chamber, comprising:
 an enclosing step enclosing the substrate in the chamber; and   an adsorbing step adsorbing excess oxygen present inside the chamber by providing an adsorption unit, which adsorbs oxygen, inside the chamber.   
     
     
         2 . A thin-film forming method according to  claim 1 , further comprising, after the enclosing step, a dispersing step dispersing the oxide by sputtering a target material. 
     
     
         3 . A thin-film forming method according to  claim 2 , wherein the target material does not contain oxygen. 
     
     
         4 . A thin-film forming method according to  claim 1 , wherein the adsorption unit is composed of a material that includes at least one of titanium, tantalum, ruthenium, rhodium, palladium, iridium, and platinum. 
     
     
         5 . A thin-film forming method according to  claim 2 , wherein at least part of a surface of the adsorption unit that faces the target material is covered by a shield. 
     
     
         6 . A thin-film forming apparatus that forms a thin film of oxide on a substrate, comprising:
 a chamber that encloses the substrate and the oxide; and   an adsorption unit adsorbing oxygen inside the chamber.   
     
     
         7 . A thin-film forming apparatus according to  claim 6 , further comprising a dispersing unit dispersing the oxide by sputtering a target material. 
     
     
         8 . A thin-film forming apparatus according to  claim 6 , wherein the adsorption unit is composed of a material that includes at least one of titanium, tantalum, ruthenium, rhodium, palladium, iridium, and platinum. 
     
     
         9 . A thin-film forming apparatus according to  claim 7 , wherein at least part of a surface of the adsorption unit that faces the target material is covered by a shield. 
     
     
         10 . A multilayer film where a thin film of oxide is formed on a surface of a substrate by oxide dispersed inside a chamber, wherein the multilayer film is formed by carrying out at least:
 an enclosing step enclosing the substrate in the chamber; and   an adsorbing step adsorbing excess oxygen present inside the chamber by providing an adsorption unit, which adsorbs oxygen, inside the chamber.   
     
     
         11 . A multilayer film according to  claim 10 , wherein the multilayer film is one of a magnetic recording medium and a magnetoresistance film that is used for reading in a magnetic recording apparatus.