Semiconductor Device

Abstract

A semiconductor device and a method of manufacturing the same, wherein first and second gate electrodes are formed to have a spacer shape. The length of an underlying dielectric film can be automatically controlled. A gate oxide film and a third gate electrode are formed between the first and second gate electrodes. Voids are not generated when burying the third conductive film. A thickness and width of the gate oxide film can be freely controlled.

1 . A semiconductor device comprising: 
 a gate oxide film formed on a semiconductor substrate;    a third gate electrode formed on the gate oxide film, the whole surface of the third gate electrode other than a top surface being covered with the gate oxide film;    first and second dielectric films formed on the semiconductor substrate at both sides of the gate oxide film;    first and second gate electrodes formed on the first and second dielectric films, respectively, and having a height higher than that of the third gate electrode; and    a fourth gate electrode formed on the gate oxide film and the third gate electrode between the first and second gate electrodes and electrically connected to the first, second, and third gate electrodes.    
   
   
       2 . The semiconductor device of  claim 1 , wherein the first and second gate electrodes have a spacer shape.  
   
   
       3 . The semiconductor device of  claim 1 , wherein the third gate electrode has two sidewalls separated from the first and second gate electrodes by the gate oxide film.  
   
   
       4 . The semiconductor device of  claim 1 , further comprising insulating film spacers formed on sidewalls of the first and second gate electrodes.