Composition and organic insulating film prepared using the same

Abstract

Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

1 . A composition comprising:
 an organic polymer material having a carboxyl group;   an organic silane material having an electron-donating group;   an organic metal compound; and   an organic solvent.   
     
     
         2 . The composition as set forth in  claim 1 , wherein the organic silane material includes, as the electron-donating group, at least one selected from the group consisting of an amine group, an imine group, a carboxyl group, a phosphoric acid group, and a sulfonic acid group. 
     
     
         3 . The composition as set forth in  claim 1 , wherein the organic silane material having an electron-donating group is represented by Formula 1 below: 
       
         
           
           
               
               
           
         
         wherein R 1  and R 2  are each independently hydrogen, a C 1˜30  linear, branched or cyclic alkyl group, a C 3˜60  cycloalkyl group, a C 2˜30  alkenyl group, a C 1˜30  acyl group, or a C 1˜30  alkoxycarbonyl group, 
         R 3 , R 4 , R 5 , R 6  and R 7  are each independently hydrogen, halogen, a C 1˜30  linear, branched or cyclic alkyl group, a C 3˜60  cycloalkyl group, a C 2˜30  alkenyl group, a C 6˜30  aryl group, or a C 1˜30  alkoxy group, at least one of which is composed of a hydrolysable functional group, R 8  is a C 18  alkylene group, and a is about 0 or about 1. 
       
     
     
         4 . The composition as set forth in  claim 1 , wherein the organic silane material having an electron-donating group is represented by Formula 2 below: 
       
         
           
           
               
               
           
         
         wherein R 1 , R 3  and R 5  are each independently halogen, a hydroxyl group, or a C 1˜10  alkoxy group, 
         R 2 , R 4  and R 6  are each independently hydrogen, halogen, a C 1˜30  linear, branched or cyclic alkyl group, or a C 3˜60  cycloalkyl group, 
         R 7  is a C 1˜8  alkylene group, and 
         a, b and c are each an integer from about 0 to about 2. 
       
     
     
         5 . The composition as set forth in  claim 1 , wherein the organic polymer material having a carboxyl group is at least one selected from the group consisting of polymethylmethacrylate, polyacrylic acid, polymethacrylacrylate, polymethylsorbate, polycarbonate, and polyethylene terephthalate. 
     
     
         6 . The composition as set forth in  claim 1 , wherein the organic metal compound is at least one selected from the group consisting of a titanium compound, a zirconium compound, a hafnium compound, and an aluminum compound. 
     
     
         7 . The composition as set forth in  claim 1 , wherein the organic metal compound is selected from the group consisting of titanium (IV) n-butoxide, titanium (IV) t-butoxide, titanium (IV) ethoxide, titanium (IV) 2-ethylhexoxide, titanium (IV) iso-propoxide, titanium (IV) (di-iso-propoxide) bis(acetylacetonate), titanium (IV) oxide bis(acetylacetonate), trichlorotris(tetrahydrofuran)titanium (III), tris (2,2,6,6-tetramethyl-3,5-heptanedionato)titanium (III), (trimethyl) pentamethyl cyclopentadienyl-titanium (IV), pentamethylcyclopentadienyltitanium trichloride (IV), pentamethylcyclo-pentadienyltitanium trimethoxide (IV), tetrachlorobis(cyclohexylmercapto) titanium (IV), tetra chlorobis(tetrahydrofuran)titanium (IV), tetrachlorodiamine titanium (IV), tetrakis(diethylamino)titanium (IV), tetrakis(dimethylamino)titanium (IV), bis(t-butylcyclopentadienyl)titanium dichloride, bis(cyclo pentadienyl)dicarbonyl titanium (II), bis(cyclopentadienyl)titanium dichloride, bis(ethylcyclopentadienyl)titanium dichloride, bis(pentamethyl cyclopentadienyl)titanium dichloride, bis(iso-propylcyclopentadienyl)titanium dichloride, tris(2,2,6,6-tetramethyl-3,5-heptanedionato)oxotitanium (IV), chlorotitanium triisopropoxide, cyclopentadienyltitanium trichloride, dichlorobis(2,2,6,6-tetramethyl-3,5-heptanedionato)titanium (IV), dimethylbis(t-butylcyclopentadienyl)titanium (IV), di(iso-propoxide)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) titanium (IV), zirconium (IV) n-butoxide, zirconium (IV) t-butoxide, zirconium (IV) ethoxide, zirconium (IV) iso-propoxide, zirconium (IV) n-propoxide, zirconium (IV) acetylacetonate, zirconium (IV) hexafluoroacetylacetonate, zirconium (IV) trifluoroacetylacetonate, tetrakis(diethylamino)zirconium, tetrakis(dimethylamino) zirconium, tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato) zirconium (IV), zirconium (IV) sulfate tetrahydrate, hafnium (IV) n-butoxide, hafnium (IV) t-butoxide, hafnium (IV) ethoxide, hafnium (IV) iso-propoxide, hafnium (IV) iso-propoxide monoisopropylate, hafnium (IV) acetylacetonate, tetrakis(dimethylamino)hafnium, aluminum n-butoxide, aluminum t-butoxide, aluminum s-butoxide, aluminum ethoxide, aluminum iso-propoxide, aluminum acetylacetonate, aluminum hexafluoroacetylacetonate, aluminum trifluoroacetylacetonate, and tris(2,2,6,6-tetramethyl-3,5-heptanedionato)aluminum. 
     
     
         8 . The composition as set forth in  claim 1 , wherein the organic solvent is at least one selected from the group consisting of an aliphatic hydrocarbon solvent including hexane or heptane, an aromatic hydrocarbon solvent including toluene, pyridine, quinoline, anisol, mesitylene or xylene, a ketone-based solvent including cyclohexanone, methyl ethyl ketone, 4-heptanone, methyl isobutyl ketone, 1-methyl-2-pyrrolidinone or acetone, an ether-based solvent including tetrahydrofuran or isopropyl ether, an acetate-based solvent including ethyl acetate, butyl acetate or propyleneglycol methyl ether acetate, an amide-based solvent including dimethylacetamide or dimethylformamide, a silicon-based solvent, and mixtures thereof. 
     
     
         9 . The composition as set forth in  claim 1 , where in the composition contains about 100 parts by weight of the organic silane material having an electron-donating group, about 20˜about 40 parts by weight of the organic polymer material having a carboxyl group, about 10˜about 40 parts by weight of the organic metal compound, and about 500˜about 2000 parts by weight of the organic solvent. 
     
     
         10 . An organic insulating film, including the composition of  claim 1 . 
     
     
         11 . An organic thin film transistor, comprising a substrate, a gate electrode, an insulating layer, an organic semiconductor layer, and a plurality of pairs of source/drain electrodes, wherein the insulating layer is the organic insulating film of  claim 10 . 
     
     
         12 . An electronic device, comprising the organic thin film transistor of  claim 11 . 
     
     
         13 . The electronic device as set forth in  claim 12 , wherein the electronic device is a liquid crystal display, a photovoltaic device, an organic light emitting diode, a sensor, memory, or an integrated circuit. 
     
     
         14 . A method of preparing an organic insulating film, comprising:
 applying a composition including an organic polymer material having a carboxyl group, an organic silane material having an electron-donating group, an organic metal compound, and an organic solvent to a substrate; and   curing the composition.   
     
     
         15 . The method as set forth in  claim 14 , wherein applying the organic silane material includes applying, as the electron-donating group, at least one selected from the group consisting of an amine group, an imine group, a carboxyl group, a phosphoric acid group, and a sulfonic acid group. 
     
     
         16 . The method as set forth in  claim 14 , wherein applying the composition includes applying the composition through spin coating, dip coating, printing, spray coating, or roll coating. 
     
     
         17 . The method as set forth in  claim 14 , wherein curing the composition is performed at about 50° C.˜about 250° C. for a time period ranging from about 10 min to about 3 hours. 
     
     
         18 . A method of fabricating an organic thin film transistor, comprising:
 forming a gate electrode, an insulating layer, an organic semiconductor layer, and a plurality of pairs of source/drain electrodes on a substrate, wherein the insulating layer is the organic insulating film prepared according to  claim 14 .   
     
     
         19 . A method of fabricating an electronic device, comprising fabricating the organic thin film transistor according to  claim 18 . 
     
     
         20 . The method as set forth in  claim 19 , wherein the electronic device is a liquid crystal display, a photovoltaic device, an organic light emitting diode, a sensor, memory, or an integrated circuit.