Plasma processing method and apparatus, and storage medium

Abstract

A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is formed, is mounted on the mounting table and then electrostatically adsorbed on the mounting table by applying a voltage to an electrostatic chuck. The surface of the substrate is etched by using a plasma of an etching gas while the substrate is cooled through a heat transfer between the substrate and the mounting table via a thermally conductive gas supplied between a top surface of the mounting table and a bottom surface of the substrate. The supply of the thermally conductive gas is stopped, and the resist mask on the substrate is ashed by using a plasma of an ashing gas containing 0 2 .

1 . A plasma processing apparatus comprising: 
 a mounting table having a cooling function, the mounting table being installed in a processing chamber and having a smaller size than a substrate;    an electrostatic chuck installed on the mounting table, for electrostatically adsorbing the substrate;    a power supply unit for applying a voltage to the electrostatic chuck;    a thermally conductive gas supply unit for supplying a thermally conductive gas between a top surface of the mounting table and a bottom surface of the substrate, wherein after the substrate having thereon a resist mask is mounted on the mounting table and then electrostatically adsorbed by the electrostatic chuck, an etching process is performed on a surface of the substrate by using a plasma while the thermally conductive gas is supplied; and    a control unit having a program including an instruction for stopping the thermally conductive gas supply of the thermally conductive gas supply unit after the etching process is completed, and an instruction for ashing the resist on the substrate by using a plasma of an ashing gas containing 0 2 .    
   
   
       2 . The plasma processing apparatus of  claim 1 , wherein the program further includes an instruction for turning off the power supply unit to stop the voltage application to the electrostatic chuck after the supply of the thermally conductive gas is stopped and before the resist mark is ashed.  
   
   
       3 . A storage medium for storing therein the program described in  claim 1   
   
   
       4 . A storage medium for storing therein the program described in  claim 2.