Soi bipolar transistors with reduced self heating

Abstract

A method for constructing a bipolar transistor comprising a collector, a base and an emitter, all located over a substrate, the method including steps of: creating a collector layer over the substrate; etching a path through the collector layer to the substrate; and filling the path with a heat-conductive material.

1 . A method for constructing a bipolar transistor comprising a collector, a base and an emitter, all located over a substrate, the method comprising steps of: 
 creating a collector layer over the substrate;    etching a path through the collector layer to the substrate; and    filling the path with a heat-conductive material.    
   
   
       2 . The method of  claim 1  wherein the heat-conductive material comprises a metal.  
   
   
       3 . The method of  claim 1  wherein the heat-conductive material comprises polysilicon.  
   
   
       4 . The method of  claim 1  further comprising removing any excess heat-conductive material.  
   
   
       5 . The method of  claim 1  wherein the step of depositing a collector layer comprises depositing an n-type material collector.  
   
   
       6 . The method of  claim 1  wherein the step of depositing a collector layer comprises depositing a p-type material collector.  
   
   
       7 . The method of  claim 1  further comprising creating an nMOS field effect transistor.  
   
   
       8 . The method of  claim 1  further comprising creating a pMOS field effect transistor.  
   
   
       9 . The method of  claim 1  further comprising: 
 locating the base over the collector; and    locating the emitter over the base, such that the bipolar transistor comprises a vertical structure.    
   
   
       10 . The method of claim further comprising: 
 locating the base and the emitter in a single layer above a buried oxide layer disposed above the substrate, such that the bipolar transistor comprises a lateral structure.