Refractory Metal Substrate with Improved Thermal Conductivity

Abstract

A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface.

1 - 22 . (canceled) 
     
     
         23 . A method of making a substrate for semiconductor and integrated circuit components comprising:
 providing a foil or plate or plate comprising a Group VIB metal from the periodic table of the elements and/or an anisotropic material;   forming a plurality of openings extending, at least partially, from a first major surface to a second major surface of the foil or plate;   filling the space encompassed by at least some of the openings with a Group IB metal from the periodic table of the elements or other high thermally conductive materials; and   optionally forming a layer comprising a Group IB metal from the periodic table of the elements or other high thermally conductive materials over at least a portion of the first major surface and at least a portion of the second major surface.   
     
     
         24 . The method according to  claim 23 , wherein the Group VIB metal is selected from the group consisting of molybdenum, tungsten, an alloy containing molybdenum and tungsten, an alloy of molybdenum, an alloy of tungsten, and combinations thereof. 
     
     
         25 . The method according to  claim 23 , wherein the Group IB metal is copper or silver. 
     
     
         26 . The method according to  claim 23 , wherein the other high thermally conductive material is selected from the group consisting of diamond, alloys, composite materials, and nanotubes. 
     
     
         27 . The method according to  claim 23 , wherein the layer contains one or more materials having a thermal conductivity of from 200 to 2,200 W/M°K. 
     
     
         28 . The method according to  claim 23 , wherein the substrate has a thickness of from 1 to 50 mils. 
     
     
         29 . The method according to  claim 23 , wherein the thickness of the foil or plate varies form 1 to 10 mils for a first portion of the foil or plate to 10 to 50 mils for a second portion of the foil or plate. 
     
     
         30 . The method according to  claim 23 , wherein the openings are from 1 to 40 mils at their largest dimension. 
     
     
         31 . The method according to  claim 23 , wherein the ratio of the diameter of the openings to the thickness of the plate is from 0.75 to 1.5. 
     
     
         32 . The method according to  claim 23 , wherein the thickness of the layer varies form 0 to 10 mils over a first portion of the foil or plate to 5 to 50 mils over a second portion of the foil or plate. 
     
     
         33 . The method according to  claim 23 , wherein the ratio of the thickness of the foil or plate to the thickness of the layer over the first major surface is from 1:0.1 to 1:2 and the layer over the second major surface is from 1:0.1 to 1:2. 
     
     
         34 . The method according to  claim 23 , wherein the substrate has a thermal conductivity of at least 50 W/M°K. 
     
     
         35 . The method according to  claim 23 , wherein the Group VIB metal is molybdenum and the Group IB metal is copper. 
     
     
         36 . The method according to  claim 23 , wherein the Group VIB metal is tungsten and the Group IB metal is copper. 
     
     
         37 . The method according to  claim 23 , wherein the foil or plate is metal and has a thermal conductivity of from 50 to 200 W/M°K. 
     
     
         38 . The method according to  claim 23 , wherein the core plate comprises an anisotropic material and has a thermal conductivity of from 50 to 2,200 W/M°K. 
     
     
         39 . The method according to  claim 23 , wherein the layer has a thermal conductivity of from 200 to 500 W/M°K. 
     
     
         40 . The method according to  claim 23 , wherein the openings in the foil or plate have a shape selected from group consisting of round, square, rectangular, hexagonal and octagonal. 
     
     
         41 . The method according to  claim 23 , wherein the openings in the foil or plate have a cross sectional shape selected from the group consisting of an hour glass-type shape, cone shape, straight sided shape and combinations thereof. 
     
     
         42 . The method according to  claim 23 , wherein the openings in the foil or plate comprise from 5 to 90 percent of the volume of the foil or plate. 
     
     
         43 . The method according to  claim 23 , wherein the openings are formed in the foil or plate by a method selected from the group consisting of etching, stamping, drilling, laser drilling, chemical milling, and combinations thereof. 
     
     
         44 . The method according to  claim 23 , wherein the layer is formed using one or methods selected from the group consisting of melting, thermal spray, powder melt, electroplating, melt and electroplate, sputtering, selective plating, infiltration, casting, pressure casting, and combinations thereof. 
     
     
         45 . The method according to  claim 23 , wherein the layer comprises from 0.001 to 1 percent by weight of the layer of Ni. 
     
     
         46 . The method according to  claim 23 , wherein two or more strips of a Group IB metal are placed over a surface of the foil or plate and heated to a melting temperature of the Group IB metal to fill the space encompassed by at least some of the openings and to form the layer. 
     
     
         47 . The method according to  claim 23 , wherein all stress inducing process steps and stress relieving steps are completed prior to adding the Group IB metal to the foil or plate. 
     
     
         48 . The method according to  claim 23  further comprising a final reduction step. 
     
     
         49 . A substrate made according to the method of  claim 23 . 
     
     
         50 . An electronic packaging component comprising the substrate according to  claim 49  and one or more semiconductor components. 
     
     
         51 . The electronic packaging component according to  claim 50 , wherein the electronic packaging component is selected from the group consisting of wireless communications devices, fiber optic lasers, power generating semiconductors, resistors, and opto-electronic devices. 
     
     
         52 . The substrate for electronic packaging components and integrated circuit components according to claim  1 , wherein the substrate is a hermetic structure. 
     
     
         53 . A stacked substrate comprising two or more substrates according to claim  1  placed one on top of the other. 
     
     
         54 . The stacked substrate according to  claim 53  having a thickness of from 2 mil to 1,000 mil. 
     
     
         55 . The stacked substrate according to  claim 53 , wherein the Group VIB metal is selected from the group consisting of molybdenum, tungsten, an alloy containing molybdenum and tungsten, an alloy of molybdenum, an alloy of tungsten, and combinations thereof. 
     
     
         56 . The stacked substrate according to  claim 53 , wherein the Group IB metal is copper, an alloy of copper, silver, or an alloy of silver. 
     
     
         57 . The stacked substrate according to  claim 53  having a capillary path between a first substrate layer and a second substrate layer. 
     
     
         58 . The stacked substrate according to  claim 53 , wherein the ratio of the diameter of the openings to the thickness of the stacked substrate is less than 0.75. 
     
     
         59 . A combination substrate comprising the substrate according to claim  1  attached to a second substrate. 
     
     
         60 . The combination substrate according to  claim 59 , wherein the second substrates is selected from the group consisting of steel, aluminum, copper, ceramic substrates and combinations thereof. 
     
     
         61 . A backing plate for a sputtering target comprising the combination substrate according to  claim 59 . 
     
     
         62 . A combination substrate comprising the stacked substrate according to  claim 53  attached to a second substrate. 
     
     
         63 . The combination substrate according to  claim 62 , wherein the second substrates is selected from the group consisting of steel, aluminum, copper, ceramic substrates and combinations thereof. 
     
     
         64 . A backing plate for a sputtering target comprising the combination substrate according to  claim 62 .