Method of manufacturing thin film device, electro-optic device, and electronic instrument

Abstract

A method of manufacturing a thin film device includes: manufacturing a multi-layered structure in which a transfer layer including a thin film device is transferred to a first surface of the transfer-target substrate; and adhering a second surface of the transfer-target substrate, to which the transfer layer was transferred, to the other substrate provided with a thin film device while the second surface faces the other substrate.

1 . A method of manufacturing a thin film device, comprising: 
 manufacturing a multi-layered structure in which a transfer layer including a thin film device is transferred to a first surface of the transfer-target substrate; and    adhering a second surface of the transfer-target substrate, to which the transfer layer was transferred, to the other substrate provided with a thin film device while the second surface faces the other substrate.    
   
   
       2 . The method according to  claim 1 , wherein the step of manufacturing the multi-layered structure includes: 
 forming the transfer layer on a transfer-source substrate via a first separation layer separated in accordance with application of a predetermined amount of energy;    bonding the transfer layer to a temporary transfer substrate;    separating the transfer-source substrate from the transfer layer by applying energy to the first separation layer to cause a boundary separation and/or an intra-layer separation in the first separation layer;    adhering the transfer layer to the first surface of the transfer-target substrate; and    separating the temporary transfer substrate from the transfer layer.    
   
   
       3 . The method according to  claim 2 , wherein the step of bonding the transfer layer to the temporary transfer substrate includes: 
 forming a second separation layer separated in accordance with application of a predetermined amount of energy on the temporary transfer substrate; and    bonding the second separation layer formed on the temporary transfer substrate and the transfer layer to each other via an adhesive layer, and    wherein the step of separating the temporary transfer substrate includes:    separating the temporary transfer substrate from the transfer layer by applying energy to the second separation layer to cause a boundary separation and/or an intra-layer separation in the second separation layer.    
   
   
       4 . The method according to  claim 1 , wherein the step of manufacturing the multi-layered structure includes: 
 forming a transfer layer including a thin film device on the transfer-source substrate via a first separation layer separated in accordance with application of energy;    adhering the transfer layer to the first surface of the transfer-target substrate; and    separating the transfer-source substrate from the transfer layer by applying energy to the first separation layer to cause a boundary separation and/or an intra-layer separation in the first separation layer.    
   
   
       5 . The method according to  claim 1 , wherein the second surface of the transfer-target substrate is adhered to the other substrate via an adhesive layer.  
   
   
       6 . The method according to  claim 1 , wherein the second surface of the transfer-target substrate is adhered to the other substrate by pressure bonding.  
   
   
       7 . The method according to  claim 1 , wherein the both substrates to be adhered to each other have flexibility.  
   
   
       8 . The method according to  claim 1 , wherein one of the substrates to be adhered to each other has higher rigidity than the other.  
   
   
       9 . The method according to  claim 5 , wherein the adhesive layer is made of a permanent adhesive.  
   
   
       10 . An electro-optic device equipped with a thin film transistor manufactured using the method according to  claim 1 .  
   
   
       11 . An electronic instrument equipped with a thin film transistor manufactured using the method according to  claim 1.