Methods for forming patterns of a filled dielectric material on substrates

Abstract

Methods of forming a pattern of filled dielectric material on a substrate by thermal transfer processes are disclosed comprising exposing to heat a thermally imageable donor element comprising a substrate and a transfer layer of dielectric material. The exposure pattern is the image of the desired pattern to be formed on the substrate, such that portions of the layer of dielectric material are transferred onto the substrate where the electronic device is being formed. The filled dielectric material can be patterned onto a gate electrode of a thin film transistor. The pattern dielectric material may also form an insulating layer for interconnects. Donor elements for use in the process are also disclosed. Methods for forming thin film transistors and donor elements for use in the thermal transfer processes are also disclosed.

1 . A process comprising: 
 a. forming a donor element comprising a transparent, dimensionally stable substrate in sheet form and a transfer layer, wherein the transfer layer comprises high dielectric constant nanoparticles and a dispersant or a polymer matrix;    b. placing the transfer layer of the donor element in contact with a receiver element; and    c. heating selected areas of the donor element to effect a transfer of portions of the transfer layer to the receiver element to form a multilayer structure.    
     
     
         2 . The process of  claim 1 , wherein the high dielectric nanoparticles comprise a material selected from the group of BaTiO 3  (barium titanate), KTaNbO 3  (potassium tantalum niobate), KSr 2 Nb 5 O 15  (potassium strontium niobate), Pb 3 MgNb 2 O 9  (lead magnesium niobate), SbSI (antimonous sulfide iodide), SnTe (time telluride), SrTiO 3  (strontium titanate), MnO 2  (manganese dioxide), CaCu 3 Ti 4 O 12  (calcium copper titanate), BaTi 2 Nb 8 O 30  (barium titanium niobate), Cd 2 Nb 2 O 2  (cadmium pyroniobate), KIO 3  (potassium iodate), KNbO 3  (potassium niobate), KTaO 3  (potassium tantalate), PbHfO 3  (lead hafnate), PbNb 2 O 6  (lead niobate), PbS (lead sulfide), PbSe (lead selenide), PbTa 2 O 6  (lead metatantalate), PbTe (lead telluride), PbTiO 3  (lead titanate), PbZrO 3  (lead zirconate), RbNO 3  (rubidium nitrate), Sb 2 Se 3  (antimonous selenide), SnSb (tin selenide), TiO 2  (titanium dioxide), Al 2 O 3  (aluminum oxide) and WO 3  (tungsten trioxide).  
     
     
         3 . The process of  claim 1 , wherein the dispersant comprises a grafted copolymer.  
     
     
         4 . The process of  claim 1 , wherein the dimensionally stable substrate of the donor element comprises polymers selected from the group consisting of polyesters, polyether sulfone, polyimides, poly(vinyl alcohol-co-acetal), polyethylenes, cellulose esters and polyvinyl chloride.  
     
     
         5 . The process of  claim 1 , wherein the receiver element comprises a dimensionally stable substrate in sheet form, and wherein the receiver substrate comprises polymers selected from the group consisting of polyesters, polyether sulfone, polyimides, poly(vinyl alcohol-co-acetal), polyethylenes, cellulose esters, mineral-filled polyester, ivory paper, spunbonded polyolefin and polyvinyl chloride.  
     
     
         6 . The process of  claim 1 , wherein an infrared laser is used to heat selected areas of the donor element.  
     
     
         7 . The process of  claim 6 , wherein the donor element further comprises a heating layer between the substrate and the transfer layer.  
     
     
         8 . The process of  claim 7 , wherein the heating layer comprises electron beam-deposited Ni.  
     
     
         9 . The process of  claim 1 , wherein the donor element further comprises an ejection layer comprising a polymer selected from the group consisting of polyvinyl chloride, chlorinated polyvinyl chloride, polymethylmethacrylate, polymethacrylate copolymers, and nitrocellulose.  
     
     
         10 . The process of  claim 9 , wherein the ejection layer further comprises a gas former selected from the group consisting of diazo alkyls, diazonium salts, and azido compounds; 
 ammonium salts; oxides, which decompose to form oxygen; carbonates; peroxides and mixtures thereof.    
     
     
         11 . The process of  claim 1 , wherein the transfer layer further comprises a radiation absorbing dye selected from the group consisting of 3-H-Indolium, 2-[2-[2-chloro-3-dihydro-1,3,3-trimethyl-2H-indol-2-ylidene)ethylidene]-1-1 cyclopentene-1-yl]ethyenyl]-1,3,3-trimethyl-, salt with trifluoromethane sulfonic acid (1:1); 2-(2-(2-chloro-3-(2(1,3-dihydro-1,1-dimethyl-3-(4-sulfobutyl)-2H-benz[e]indol-2-ylidene)ethylidene)-1-cyclohexene-1-yl)ethenyl)-1,1-dimethyl-3-(4-sulfobutyl)-1H-benz[e]indolium, inner salt, free acid; and 4-((3-((2,6-bis(1,1-dimethylethyl)-4H-thipyran-4-ylidene)methyl-2-hydroxy-4-oxo-2-cyclobutene-1-ylidene)methyl)-2,6-bis(1,1-dimethylethyl)-, inner salt.  
     
     
         12 . The process of  claim 1 , wherein the receiver element further comprises an adhesive layer comprising a polymer selected from the group consisting of polycarbonate; polyurethane; polyester; polyvinyl chloride; styrene/acrylonitrile copolymer; poly(capro-lactone); vinylacetate copolymers with at least one of ethylene and vinyl chloride; (meth)acrylate homopolymers copolymers; pressure-sensitive adhesives and mixtures thereof.  
     
     
         13 . The process of  claim 1 , further comprising applying onto the multilayer structure a patterned layer of conductive material.  
     
     
         14 . A process comprising: 
 a. forming a donor element comprising a substrate and a transfer layer, wherein the transfer layer comprises a dispersion or polymer composite of high dielectric constant nanoparticles;    b. removing a portion of the transfer layer to form a patterned transfer layer on the substrate;    c. transferring the patterned layer onto a receiver element.    
     
     
         15 - 23 . (canceled)