US2008096129A1PendingUtilityA1

Process for production of electroluminescent element and electroluminescent element

Assignee: DAINIPPON PRINTING CO LTDPriority: Jun 29, 2004Filed: Dec 7, 2007Published: Apr 24, 2008
Est. expiryJun 29, 2024(expired)· nominal 20-yr term from priority
H10K 71/40H10K 59/35H10K 85/1135H10K 71/233H10K 71/00
52
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Claims

Abstract

A process of producing an electroluminescent element is provided. The production process comprises repeating at least twice a step of forming an electroluminescent layer comprising a buffer layer and a luminescent layer by patterning using a photolithographic process, thereby producing an electroluminescent element comprising a patterned electroluminescent layer. The method includes the steps of forming a first pattern part comprising a first buffer layer as the lowermost layer, and coating a solution for forming a second buffer layer in a region including the first pattern part. The first buffer layer is immiscible with the solution for forming the second buffer layer.

Claims

exact text as granted — not AI-modified
1 . A solution for buffer layer formation, for use in the step of forming an electroluminescent layer comprising a buffer layer and a luminescent layer by patterning using a photolithographic process, 
 said solution for buffer layer formation comprising at least a metal oxide or a photocatalyst and a heat- and/or photo-curable binder, said binder comprising an organopolysiloxane that is a hydrolyzed condensate or cohydrolyzed condensate of one or two or more silicon compounds represented by formula Y n SiX (4-n)  wherein Y represents an alkyl, fluoroalkyl, vinyl, amino, phenyl, or epoxy group; X represents an alkoxyl group or a halogen; and n is an integer of 0 to 3.    
     
     
         2 . The solution for buffer layer formation according to  claim 1 , wherein said photocatalyst is titanium dioxide.  
     
     
         3 . A solution for buffer layer formation, for use in the step of forming an electroluminescent layer comprising a buffer layer and a luminescent layer by patterning using a photolithographic process, said solution for buffer layer formation comprising: an organic material that contains a hydrophilic group in its molecule and is dissolvable or dispersible in water or an alcohol; and a silane coupling agent.  
     
     
         4 . The solution for buffer layer formation according to  claim 3 , wherein said organic material comprises polystyrenesulfonic acid or a polystyrenesulfonic acid derivative, or polythiophenesulfonic acid or a polythiophenesulfonic acid derivative.  
     
     
         5 . The solution for buffer layer formation according to  claim 3 , wherein said organic material is a salt of a poly-3,4-alkenedioxythiophene with polystyrenesulfonic acid, or a derivative thereof.  
     
     
         6 . The solution for buffer layer formation according to  claim 3 , wherein said silane coupling agent is represented by formula  
       
         
           
           
               
               
           
         
       
       wherein X represents OR wherein R represents an alkyl group; Y represents an epoxy or acryloyl group; and n is an integer of 0 to 2.  
     
     
         7 . The solution for buffer layer formation according to  claim 6 , wherein said silane coupling agent contains a glycido or acryloyl group.  
     
     
         8 . A solution for buffer layer formation, for use in the step of forming an electroluminescent layer comprising a buffer layer and a luminescent layer by patterning using a photolithographic process, 
 said solution for buffer layer formation comprising an organic material in which a part or all of hydrophilic groups are converted to oleophilic groups and a part or all of said oleophilic groups are returned to hydrophilic groups by using heat or radiation energy.    
     
     
         9 . The solution for buffer layer formation according to  claim 8 , wherein said organic material comprises polystyrenesulfonic acid or a polystyrenesulfonic acid derivative, or polythiophenesulfonic acid or a polythiophenesulfonic acid derivative.  
     
     
         10 . The solution for buffer layer formation according to  claim 8 , wherein said organic material is a salt of a poly-3,4-alkenedioxythiophene with polystyrenesulfonic acid, or a derivative thereof.

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