Complementary metal-oxide-semiconductor (cmos) image sensor and fabricating method thereof

Abstract

A complementary metal-oxide-semiconductor (CMOS) image sensor including a substrate, a p type well, a light emitting diode, a p type gate structure and a plurality of n type gate structures is provided. The substrate has a photo sensitive region and a transistor device region, and the p type well is disposed in the substrate. The light emitting diode is disposed in the p type well and the substrate of the photo sensitive region. The p type gate structure is disposed on the substrate of the transistor device region. The n type gate structures are disposed on the substrate of the transistor device region.

1 - 16 . (canceled) 
     
     
         17 . A complementary metal-oxide-semiconductor image sensor, comprising:
 a substrate, having a photo sensitive region and a transistor device region;   a light emitting diode, disposed in the substrate of the photo sensitive region;   a p type gate structure, disposed on the substrate of the transistor device region; and   a plurality of n type gate structures, disposed on the substrate of the transistor device region.   
     
     
         18 . The complementary metal-oxide-semiconductor image sensor according to  claim 17 , wherein the n type gate stractures are the gate structures of three of a transfer transistor, a reset transistor, a source coupling transistor and a select transistor, and the p type gate structure is the gate structure of the other one of the transistors. 
     
     
         19 . The complementary metal-oxide-semiconductor image sensor according to  claim 17 , wherein the n type gate structures are the gate structures of two of a reset transistor, a source coupling transistor and a select transistor, and the p type gate structure is the gate structure of the other one of the transistors. 
     
     
         20 . The complementary metal-oxide-semiconductor image sensor according to  claim 17 , wherein the light emitting diode is a p-n junction. 
     
     
         21 . A complementary metal-oxide-semiconductor image sensor, comprising:
 a substrate, having a photo sensitive region and a transistor device region;   a light emitting diode, disposed in the substrate of the photo sensitive region; and   a plurality of n type transistors, disposed on the substrate of the transistor device region, wherein the n type transistors comprise a p type gate structure and a plurality of n type gate structures.   
     
     
         22 . The complementary metal-oxide-semiconductor image sensor according to  claim 21 , wherein the n type gate structures are the gate structures of three of a transfer transistor, a reset transistor, a source coupling transistor and a select transistor, and the p type gate structure is the gate structure of the other one of the transistors. 
     
     
         23 . The complementary metal-oxide-semiconductor image sensor according to  claim 21 , wherein the n type gate structures are the gate structures of two of a reset transistor, a source coupling transistor and a select transistor, and the p type gate structure is the gate structure of the other one of the transistors. 
     
     
         24 . The complementary metal-oxide-semiconductor image sensor according to  claim 21 , wherein the light emitting diode is a p-n junction.