Method for treating the etching solution

Abstract

The present etching system includes a processing tank with an etching solution containing silicon, a cooling tank, a pre-heating tank, a first pipe for transferring the etching solution from the processing tank to the cooling tank, a second pipe for transferring the etching solution from the cooling tank to the pre-heating tank, and a third pipe for transferring the etching solution from the pre-heating tank to the processing tank. The present method for treating the etching solution first performs an etching process using the etching solution, which is then cooled to a first temperature to form a silicon-saturated etching solution. After silicon-containing particles larger than a predetermined size are filtered out, the silicon-saturated etching solution is heated to a second temperature to form a non-saturated etching solution for performing another etching process later. The second temperature is preferably at least 10° C. higher than the first temperature.

1 . Method for treating an etching solution, comprising steps of: 
 performing an etching process for stripping a silicon nitride film in a processing tank by using an etching solution including phosphoric acid;    cooling the etching solution to a first temperature such that the silicon concentration of the etching solution is saturated at the first temperature to form a silicon-saturated etching solution and silicon particles;    removing the silicon particles;    heating the silicon-saturated etching solution to a second temperature to form a non-saturated etching solution; and    implanting the non-saturated etching solution to the processing tank;    wherein the silicon concentration of the etching solution is maintained at a predetermined level other than a zero silicon concentration.    
   
   
       2 . The method for treating an etching solution of  claim 1 , wherein the first temperature is between 80° C. and 120° C.  
   
   
       3 . The method for treating an etching solution of  claim 1 , wherein the second temperature is at least 10° C. higher than the first temperature.  
   
   
       4 . The method for treating an etching solution of  claim 1 , wherein the step of removing the silicon particles is performed by filtering silicon particles larger than a predetermined size from the reuse etching solution in a subsidiary loop.  
   
   
       5 . The method for treating an etching solution of  claim 4 , wherein the step of filtrating silicon particles is performed by passing the reuse etching solution in a downstream manner through the filter with a plurality of openings smaller than 0.1 μm to remove silicon particles larger than the openings from the etching solution.  
   
   
       6 . The method for treating an etching solution of  claim 1 , wherein the etching process is performed at the second temperature.  
   
   
       7 . The method for treating an etching solution of  claim 1 , wherein the non-saturated etching solution further comprises a fresh etching solution.