Method of manufacturing semiconductor device, semiconductor device, and mounting structure of semiconductor device

Abstract

A method of manufacturing a semiconductor device, including the following steps, forming a resin layer on a surface of a semiconductor chip, the surface is provided with a bump formed thereon, the resin layer having photosensitivity and adhesiveness, exposing an upper surface of the bump by removing a part of the resin layer right above the bump by exposing and then developing the resin layer, and bonding the semiconductor chip provided with a resin film formed of the resin layer face-down to a substrate, the bump of the semiconductor chip and a conductive section of the substrate being electrically connected by the resin film functioning as an adhesive.

1 . A device, comprising: 
 a semiconductor device having a plurality of terminals formed on a surface thereof;    a semiconductor chip attached to said semiconductor device, said semiconductor chip having a plurality of bumps directly formed thereon, and each of said plurality of terminals corresponding to each of said plurality of bumps; and    a resin film made of adhesive resin provided on a surface of said semiconductor chip such that an upper surface of said bumps are exposed through said resin film;    wherein said resin film directly contacts and bonds said semiconductor chip and said semiconductor device; and    wherein said semiconductor chips are integrally formed on a wafer, a part of the resin layer right above said bumps and a part of the resin layer right above a dicing line of the wafer are removed in the exposing step to expose the dicing line.    
   
   
       2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a resin forming the resin layer is a photosensitive and thermoplastic resin or a precursor of the photosensitive and thermoplastic resin, and further comprising: 
 heating the resin layer to change the resin forming the resin layer into the resin film formed of a thermoplastic resin.    
   
   
       3 . The method of manufacturing a semiconductor device according to  claim 2 , wherein at least one of a photosensitive and thermoplastic resin forming the resin layer and a material of the photosensitive and thermoplastic resin including a precursor of the photosensitive and thermoplastic resin includes one of a thermoset resin and a component of the thermoset resin.  
   
   
       4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the resin layer is formed of a photosensitive and thermoset resin adhesive sheet.  
   
   
       5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a number of the semiconductor chips are integrally formed on a wafer, a part of the resin layer right above a dicing line of the wafer is removed simultaneously in the exposing step to expose the dicing line.  
   
   
       6 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a mark is formed on the semiconductor chip, a part of the resin layer right above the mark on the semiconductor chip is removed simultaneously in the exposing step to expose the mark.  
   
   
       7 . The method of manufacturing a semiconductor device according to  claim 1 , wherein, in the bonding step, the bump is electrically connected to the conductive section via a brazing filler metal.