Semiconductor polishing compound

Abstract

To provide a semiconductor polishing compound which is excellent in dispersion stability and removal rate and which has a stabilized polishing property, as it is less susceptible to an influence even when contacted with an alkaline polishing compound during its application to CMP comprising a multistage process. A polishing compound for chemical mechanical polishing to polish a surface to be polished in the production of a semiconductor circuit device, said polishing compound comprising cerium oxide abrasive particles, water and a dicarboxylic acid represented by the formula 1: HOOC(CH 2 ) n COOH  Formula 1 wherein n is an integer of from 1 to 4, and the pH of said polishing compound at 25° C. being within a range of from 3.5 to 6.

1 . A semiconductor polishing compound which is a polishing compound for chemical mechanical polishing to polish a surface to be polished in the production of a semiconductor circuit device, said polishing compound comprising cerium oxide abrasive particles, water and a dicarboxylic acid represented by the formula 1:  
         HOOC(CH 2 ) n COOH  Formula 1  
       wherein n is an integer of from 1 to 4, and the pH of said polishing compound at 25° C. being within a range of from 3.5 to 6.  
     
     
         2 . The semiconductor polishing compound according to  claim 1 , wherein the pH is within a range of from 4 to 6.  
     
     
         3 . The semiconductor polishing compound according to is  claim 1 , wherein the absolute value of the difference between the pKa value of said dicarboxylic acid and said pH is at most 1.0.  
     
     
         4 . The semiconductor polishing compound according to  claim 1 , wherein the dicarboxylic acid is at least one member selected from the group consisting of malonic acid, succinic acid and adipic acid.  
     
     
         5 . The semiconductor polishing compound according to  claim 1 , wherein the concentration of the dicarboxylic acid is from 0.01 to 0.5 mass %.  
     
     
         6 . The semiconductor polishing compound according to  claim 1 , wherein the surface to be polished is made of silicon dioxide.  
     
     
         7 . The semiconductor polishing compound according to  claim 1 , which contain at least one additive selected from the group consisting of a water-soluble organic polymer and an anionic surfactant.  
     
     
         8 . The semiconductor polishing compound according to  claim 7 , wherein the water-soluble organic polymer is a polyacrylic acid or an ammonium polyacrylate.