Fabrication of strained silicon film via implantation at elevated substrate temperatures

Abstract

A strained-silicon film is disclosed. A silicon-germanium film is made by ion implantation of germanium into an epitaxial silicon layer, preferably at a temperature in the range of 200 C to 400 C. The wafer is annealed in situ or optionally after implantation. A silicon film is applied to the silicon-germanium film in a conventional manner to create the strained-silicon substrate.

1 . A method of making a strained-silicon film, comprising: 
 creating a silicon-germanium film in an epitaxial silicon layer by ion implantation of germanium into said epitaxial silicon layer; and    applying a silicon film to said silicon-germanium film.    
     
     
         2 . The method of  claim 1 , wherein said implantation step occurs at a temperature between about 200 C and 400 C.  
     
     
         3 . The method of  claim 1 , further comprising the step of post-implantation annealing.  
     
     
         4 . The method of  claim 3 , wherein said implantation step occurs at a temperature between about 200 C and 400 C.  
     
     
         5 . A method of making a silicon-germanium film, comprising: 
 creating a silicon-germanium film in an epitaxial silicon layer by ion implantation of germanium into said epitaxial silicon layer.    
     
     
         6 . The method of  claim 5 , wherein said implantation step occurs at a temperature between about 200 C and 400 C.  
     
     
         7 . The method of  claim 5 , further comprising the step of post-implantation annealing.  
     
     
         8 . The method of  claim 7 , wherein said implantation step occurs at a temperature between about 200 C and 400 C.