Substrate processing apparatus

Abstract

A substrate processing apparatus of the invention includes: a substrate holding unit that holds a substrate almost in a horizontal posture; a rotating unit that rotates the substrate held by the substrate holding unit about a vertical shaft line; and an etching liquid nozzle disposed oppositely to a bottom surface of the substrate held by the substrate holding unit and having plural discharge ports each having a different distance from a rotation center of the substrate rotated by the rotating unit so as to discharge an etching liquid toward the bottom surface of the substrate rotated by the rotating unit from the plural discharge ports.

1 . A substrate processing apparatus, comprising:
 a substrate holding unit that holds a substrate almost in a horizontal posture:   a rotating unit that rotates the substrate held by the substrate holding unit about a vertical shaft line; and   an etching liquid nozzle disposed oppositely to a bottom surface of the substrate held by the substrate holding unit and having plural discharge ports each having a different distance from a rotation center of the substrate rotated by the rotating unit so as to discharge an etching liquid toward the bottom surface of the substrate rotated by the rotating unit from the plural discharge ports.   
   
   
       2 . The substrate processing apparatus according to  claim 1 , wherein:
 the plural discharge ports of the etching liquid nozzle are provided in such a manner that discharge flow rates of the etching liquid per unit area on the bottom surface of the substrate that is being rotated by the rotating unit become equal almost entirely across the bottom surface of the substrate.   
   
   
       3 . The substrate processing apparatus according to  claim 1 , wherein:
 the plural discharge ports of the etching liquid nozzle are aligned along a rotation radius direction of the substrate rotated by the rotating unit.   
   
   
       4 . The substrate processing apparatus according to  claim 1 , wherein:
 the plural discharge ports of the etching liquid nozzle are disposed more densely with distance from the rotation center of the substrate rotated by the rotating unit.   
   
   
       5 . The substrate processing apparatus according to  claim 1 , wherein:
 the plural discharge ports of the etching liquid nozzle are aligned along a rotation radius direction at almost same density so as to oppose a region from a center to a peripheral edge of the substrate rotated by the rotating unit.   
   
   
       6 . The substrate processing apparatus according to  claim 1 , wherein:
 the plural discharge ports of the etching liquid nozzle include plural peripheral discharge ports aligned along a rotation radius direction almost at same density so as to oppose a region of the substrate rotated by the rotating unit excluding a center thereof.   
   
   
       7 . The substrate processing apparatus according to  claim 5 , wherein:
 the plural discharge ports include a discharge port for peripheral edge to supply the etching liquid to a peripheral edge of the substrate rotated by the rotating unit and plural inner discharge ports disposed closer to the rotation center of the substrate than the discharge port for peripheral edge; and   the discharge port for peripheral edge includes a larger diameter discharge port having a larger diameter than the inner discharge ports.   
   
   
       8 . The substrate processing apparatus according to  claim 5 , wherein:
 the plural discharge ports include a discharge port for peripheral edge to supply the etching liquid to a peripheral edge of the substrate rotated by the rotating unit; and   the discharge port for peripheral edge has an inclined discharge port that discharges the etching liquid in a direction inclined outward in a radius direction of the substrate with respect to a vertical direction.   
   
   
       9 . The substrate processing apparatus according to  claim 6 , wherein:
 the plural discharge ports include a discharge port for peripheral edge to supply the etching liquid to a peripheral edge of the substrate rotated by the rotating unit and plural inner discharge ports disposed closer to the rotation center of the substrate than the discharge port for peripheral edge; and   the discharge port for peripheral edge includes a larger diameter discharge port having a larger diameter than the inner discharge ports.   
   
   
       10 . The substrate processing apparatus according to  claim 6 , wherein:
 the plural discharge ports include a discharge port for peripheral edge to supply the etching liquid to a peripheral edge of the substrate rotated by the rotating unit; and   the discharge port for peripheral edge has an inclined discharge port that discharges the etching liquid in a direction inclined outward in a radius direction of the substrate with respect to a vertical direction.   
   
   
       11 . The substrate processing apparatus according to  claim 1 , further comprising:
 an etching liquid heating unit that heats the etching liquid to be discharged from the plural discharge ports of the etching liquid nozzle.   
   
   
       12 . The substrate processing apparatus according to  claim 1 , wherein:
 the substrate holding unit includes plural holding members that hold the substrate almost in the horizontal posture in cooperation by abutting on a peripheral edge of the substrate at different positions.