Polishing apparatus and polishing method

Abstract

A polishing apparatus polish a surface of a substrate, such as a semiconductor substrate. The polishing apparatus according to the present invention includes a substrate holding mechanism, a polishing table having a polishing surface, and a polishing surface temperature controller for controlling a temperature distribution of the polishing surface. The substrate holding mechanism and the polishing table are operable to provide relative movement between the surface of the substrate and the polishing surface while the substrate holding mechanism presses the surface of the substrate against the polishing surface to thereby polish the surface of the substrate. The polishing surface temperature controller controls the temperature distribution so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate.

1 - 14 . (canceled)  
   
   
       15 . A polishing method comprising: 
 bringing a surface of a substrate into contact with a polishing surface;    providing relative movement between the surface of the substrate and the polishing surface to perform a first polishing process of polishing the surface of the substrate; and    during said first polishing process, performing a temperature distribution control of the polishing surface so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate;    after said first polishing process, providing relative movement between the surface of the substrate and the polishing surface to perform a second polishing process of polishing the surface of the substrate without performing said temperature distribution control; and    detecting a polishing end point during said second polishing process.    
   
   
       16 . The polishing method according to  claim 15 , wherein: 
 said first polishing process comprises performing polishing while ejecting a fluid to the polishing surface so as to control the temperature distribution of the polishing surface; and    said second polishing process comprises performing polishing without ejecting the fluid to the polishing surface.    
   
   
       17 . The polishing method according to  claim 15 , wherein a time of said first polishing process accounts for more than half of an entire time of polishing the surface of the substrate.