Semiconductor device having sealing film and manufacturing method thereof

Abstract

A semiconductor device includes a plurality of wiring lines which are provided on an upper side of a semiconductor substrate and which have connection pad portions, Columnar electrodes are provided on the connection pad portions of the wiring lines. A first sealing film is provided around the columnar electrodes on the upper side of the semiconductor substrate and on the wiring lines. A second sealing film is provided on the first sealing film. The first sealing film is made of a resin in which fillers are not mixed, and the second sealing film is made of a material in which fillers are mixed in a resin.

1 . A semiconductor device comprising: a semiconductor substrate; a plurality of wiring lines which are provided on an upper side of the semiconductor substrate and which have connection pad portions; a plurality of columnar electrodes provided on the connection pad portions of the wiring lines; a first sealing film provided around the columnar electrodes on the upper side of the semiconductor substrate and on the wiring lines; and a second sealing film provided on the first sealing film, wherein the first sealing film is made of a resin in which fillers are not mixed, and the second sealing film is made of a material in which fillers are mixed in a resin. 
     
     
         2 . The semiconductor device according to  claim 1 , wherein an upper surface of the first sealing film is substantially flat. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein a solder ball is provided on each of the columnar electrodes. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein an insulating layer is interposed between the semiconductor substrate and the wiring lines. 
     
     
         5 . The semiconductor device according to  claim 4 , wherein the insulating layer includes an insulating film made of an inorganic material, and a protective film made of an organic material formed on the insulating film. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the first sealing film has a thickness of several μm. 
     
     
         7 . The semiconductor device according to  claim 6 , wherein the second sealing film has a thickness of several ten μm or more. 
     
     
         8 . A semiconductor device manufacturing method comprising:
 forming a plurality of wiring lines on an upper side of a semiconductor wafer, and respectively forming columnar electrodes on connection pad portions of the wiring lines;   forming a first sealing film formation film made of a liquid resin on an upper side of the wafer in the atmosphere to fill a gap between the wiring lines;   carrying out vacuum deaeration for the first sealing film formation film;   forming a second sealing film formation film made of a liquid resin containing fillers on the first sealing film formation film in the atmosphere;   carrying out the vacuum deaeration for the second sealing film formation film;   hardening the first and second sealing film formation films by a thermal treatment to form first and second sealing films; and   cutting the semiconductor wafer and the first and second sealing films to obtain a plurality of semiconductor devices.   
     
     
         9 . The semiconductor device manufacturing method according to  claim 8 , wherein the forming the first sealing film formation film includes forming the first sealing film formation film so that the wiring lines are covered and so that an upper surface of this first sealing film formation film is flat. 
     
     
         10 . The semiconductor device manufacturing method according to  claim 8 , wherein the first sealing film formation film is formed by spin coating. 
     
     
         11 . The semiconductor device manufacturing method according to  claim 8 , wherein the second sealing film formation film is formed by screen printing. 
     
     
         12 . The semiconductor device manufacturing method according to  claim 8 , further comprising polishing the second sealing film and upper sides of the columnar electrodes after forming the first and second sealing film formation films. 
     
     
         13 . The semiconductor device manufacturing method according to  claim 12 , further comprising forming a solder ball on each of the columnar electrodes after the polishing. 
     
     
         14 . The semiconductor device manufacturing method according to  claim 8 , wherein said carrying out the vacuum deaeration for the first sealing film formation film includes simultaneously carrying out the vacuum deaeration for the plurality of semiconductor wafer in each of which the columnar electrodes are formed on the connection pad portions of the wiring lines. 
     
     
         15 . The semiconductor device manufacturing method according to  claim 14 , wherein said carrying out the vacuum deaeration for the first sealing film formation film includes simultaneously carrying out the vacuum deaeration for the plurality of semiconductor wafers to each of which the first sealing film formation films is provided. 
     
     
         16 . The semiconductor device manufacturing method according to  claim 8 , wherein said carrying out the vacuum deaeration for the second sealing film formation film includes simultaneously carrying out the vacuum deaeration for the plurality of semiconductor wafers to each of which the second sealing film formation film is provided. 
     
     
         17 . semiconductor device manufacturing method according to  claim 8 , the first sealing film formation film does not include any fillers.