Em rectifying antenna suitable for use in conjunction with a natural breakdown device

Abstract

A rectenna capable of power conversion from electromagnetic (EM) waves of high frequencies is provided. In one embodiment, a rectenna element generates currents from two sources—based upon the power of the incident EM wave and from an n-type semiconductor, or another electron source attached to a maximum voltage point of an antenna element. The combined current from both sources increases the power output of the antenna, thereby increasing the detection sensitivity of the antenna of a low power signal. Full wave rectification is achieved using a novel diode connected to a gap in the antenna element of an rectenna element. The diode is conductive at a zero bias voltage, and rectifies the antenna signal generated by the desired EM wave received by antenna. Further, the diode may provide a fixed output voltage regardless of the input signal level. The rectenna element of the present invention may be used as a building block to create large rectenna arrays.

1 - 52 . (canceled)  
   
   
       53 . A semiconductor device, comprising a first semiconductor region that is fully depleted at zero bias voltage across the semiconductor device and a contact adjacent to the first semiconductor region.  
   
   
       54 . A semiconductor device as in  claim 53 , further comprising a second semiconductor region forming a pn junction with the first semiconductor region.  
   
   
       55 . A semiconductor device as in  claim 54 , wherein the semiconductor device conducts a current substantially linearly, when a reverse bias voltage is imposed across the first semiconductor region and the contact.  
   
   
       56 . A semiconductor device as in  claim 53 , wherein the first semiconductor region is a forced depletion region.  
   
   
       57 . A semiconductor device as in  claim 53 , wherein the first semiconductor region is a non-forced depletion region.  
   
   
       58 . A method for creating a natural breakdown device, comprising: 
 providing a semiconductor device with a junction formed by a first semiconductor region and a region of a predetermined material, wherein the first semiconductor region has a width greater than its depletion width;    adjusting a parameter of the region of the predetermined material such that the width of the first semiconductor is equal to or less than the expected depletion width of the first semiconductor region.    
   
   
       59 . A method as in  claim 58 , wherein the predetermined material comprises a second semiconductor region and the parameter adjusted comprises a dopant concentration.  
   
   
       60 . A method as in  claim 58 , wherein the predetermined material comprises a conductor material forming a contact and the parameter adjusted comprises a work function of the conductor material.  
   
   
       61 . A method as in  claim 58 , wherein the parameter adjusted is a dimension of the region of the predetermined material relative the width the dimension of the semiconductor region.  
   
   
       62 . A natural breakdown diode, comprising: 
 a first semiconductor region of a first conductivity type having a first doping concentration;    a second semiconductor region of a second conductivity type opposite first conductivity type having a second doping concentration; and    an ohmic contact adjacent the first semiconductor region; wherein the first semiconductor region is fully depleted at zero bias voltage across the first semiconductor region and the second semiconductor region.    
   
   
       63 . A natural breakdown diode as in  claim 62 , further comprises a third semiconductor region of first semiconductor type between the first semiconductor region and the ohmic contact, and wherein the first semiconductor region and the third semiconductor region are fully depleted at a zero bias voltage across the first semiconductor region, second semiconductor region and third semiconductor region.  
   
   
       64 . A natural breakdown diode as in  claim 62 , wherein the natural breakdown diode is conducting when a negative bias voltage is imposed across the first semiconductor region and second semiconductor region.  
   
   
       65 . A natural breakdown diode as in  claim 62 , wherein the natural breakdown diode provides a substantially constant output when a bias voltage between zero volts and a predetermined voltage Vs is imposed across the first semiconductor region and second semiconductor region.  
   
   
       66 . A natural breakdown diode as in  claim 62 , further comprising a third semiconductor region of second semiconductor type between the second semiconductor region and first semiconductor region.  
   
   
       67 . A natural breakdown diode as in  claim 62 , wherein the second semiconductor region is fully depleted at zero bias voltage across the first semiconductor region and the second semiconductor region.  
   
   
       68 . A method for providing a natural breakdown diode, comprising: 
 providing a first semiconductor region of a first conductivity type having a first doping concentration and providing a second semiconductor region of a second conductivity type opposite first conductivity having a second doping concentration;    providing a width for the first semiconductor region that is less than or equal to a first semiconductor region depletion width of a conventional diode having a first semiconductor region of the first doping concentration and a second doping concentration; and    providing an ohmic contact adjacent the first semiconductor region.    
   
   
       69 . A method as in  claim 68 , further comprises providing a third semiconductor region of same conductivity type as first conductivity type between the first semiconductor region and the ohmic contact having a third doping concentration, wherein the first semiconductor region and the third semiconductor region are fully depleted at zero bias voltage across first semiconductor region, the second semiconductor region and the third semiconductor region.  
   
   
       70 . A method as in  claim 68 , further comprising providing the diode to operate at break down mode when a zero bias voltage is imposed across the first semiconductor region and the second semiconductor region.  
   
   
       71 . A method as in  claim 68 , further comprising providing the diode a constant voltage output when a bias voltage between zero volts and a predetermined voltage V S  is imposed across the p-region and the n-region.  
   
   
       72 . A method as in  claim 68 , further providing the second semiconductor region to be fully depleted at zero bias voltage across the first semiconductor region and the second semiconductor region.  
   
   
       73 . A rectifier, comprising: 
 a conductor having a first end and a second end; and    a semiconductor device connected to the first end of the conductor, wherein the semiconductor device including a semiconductor region that is fully depleted at zero bias voltage.    
   
   
       74 . A rectifier as in  claim 73 , further comprising a second semiconductor device, connected to the conductor that includes a semiconductor region that is fully depleted at zero bias voltage.  
   
   
       75 . A rectifier as in  claim 73 , further including a second conductor separated from the first conductor by a gap.  
   
   
       76 . A method to fully rectify an input signal with a single semiconductor device, comprising, 
 providing a first semiconductor region of a first conductivity type;    providing a second semiconductor region of a second conductivity type opposite first conductivity type adjacent to the first semiconductor region;    providing an ohmic contact adjacent to first semiconductor region opposite the second semiconductor region;    providing the first semiconductor region is forced depleted at zero bias voltage across the contact, the first semiconductor region and the second semiconductor region; and    providing the input signal.    
   
   
       77 . A method for providing a natural breakdown diode, comprising: 
 (1) determining the doping concentrations of a p-region and an n-region of a conventional pn junction diode;    (2) selecting a forward-bias voltage V S  less than the conventional pn junction diode threshold voltage V th  and which is less than a predetermined maximum bias voltage for the diode; and    (3) calculating the depletion width w p  or w n  of the conventional pn junction diode when a bias voltage of V S  is imposed across the p-region and the n-region of the conventional pn junction diode;    (4) providing w p  as the width of a p-region or w n  as the width of an n-region within the natural breakdown diode.