Light emitting devices

Abstract

Light-emitting devices, and related components, systems and methods are disclosed.

1 . (canceled)  
   
   
       2 . A device comprising: 
 a III-nitride semiconductor structure including an active region disposed between a first n-type region and a p-type region;    a photonic crystal structure disposed in at least a portion of the first n-type region;    a second n-type region disposed between the photonic crystal structure and the active region; and    a reflector disposed on at least a portion of a surface of the p-type region opposite the active region.    
   
   
       3 . The device of  claim 2  wherein a majority of light emitted by the active region that exits the semiconductor structure exits through a surface of the semiconductor structure opposite the surface on which the reflector is disposed.  
   
   
       4 . The device of  claim 2  further comprising a first contact electrically connected to one of the first and second n-type regions and a second contact electrically connected to the p-type region, wherein the first and second contacts are disposed on the sane side of the semiconductor structure.  
   
   
       5 . The device of  claim 4  wherein one of the first and second contacts is reflective.  
   
   
       6 . The device of  claim 4  wherein the second contact is reflective.  
   
   
       7 . The device of  claim 4  wherein the second contact comprises Ag.  
   
   
       8 . The device of  claim 4  further comprising at least one via extending through the p-type region and the active region to one of the first and second n-type regions, wherein the first contact is disposed within the via.  
   
   
       9 . The device of  claim 4  further comprising a material disposed between the first and second contacts.  
   
   
       10 . The device of  claim 9  wherein the material is a dielectric.  
   
   
       11 . The device of  claim 2  further comprising a first contact electrically connected to one of the first and second n-type regions and a second contact electrically connected to the p-type region, wherein the first and second contacts are disposed on opposite sides of the semiconductor structure.  
   
   
       12 . The device of  claim 2  wherein the photonic crystal structure comprises a planar lattice of holes.  
   
   
       13 . The device of  claim 11  wherein the planar lattice includes one or more lattice types selected from the group consisting of a triangular lattice, a square lattice, a hexagonal lattice, and a honeycomb lattice.  
   
   
       14 . The device of  claim 11  wherein a lattice type, lattice constant, hole diameter, and hole depth of the planar lattice of holes are selected to create a predetermined radiation pattern.  
   
   
       15 . The device of  claim 13  wherein greater than 50% of radiation exiting the semiconductor structure is emitted in an exit cone defined by an angle of 45 degrees to an axis normal to a surface of the semiconductor structure.  
   
   
       16 . A device comprising: 
 a III-nitride semiconductor structure including an active region disposed between a first part of a n-type region and a p-type region;    a photonic crystal structure disposed in at least a portion of the n-type region;    a second part of the n-type region disposed between the photonic crystal structure and the active region; and    a reflector disposed on at least a portion of a surface of the p-type region opposite the active region.