Method of processing a substrate, heating apparatus, and method of forming a pattern

Abstract

A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

1 .- 8 . (canceled)  
   
   
       9 . A method of processing a substrate, comprising: 
 forming a chemically amplified resist film on a substrate;    irradiating energy beams to the chemically amplified resist film to form a latent image therein;    moving a heating section relatively to the chemically amplified resist film in order to carry out heating with respect to the chemically amplified resist film forming the latent image; and,    forming a liquid stream between the heating section and the chemically amplified resist film in the movement of the heating section.    
   
   
       10 . The method according to  claim 9 , wherein the range heated by the heating section has a slit shape.  
   
   
       11 . The method according to  claim 9 , wherein the heating section cools the chemically amplified resist film except the range heated.  
   
   
       12 . The method according to  claim 11 , wherein the substrate is placed on a stage, and said cooling is carried out to control the temperature of the stage.  
   
   
       13 . The method according to  claim 11 , wherein said cooling is carried out in a manner of forming the liquid stream on the chemically amplified resist film around the heating range.  
   
   
       14 . The method according to  claim 9 , wherein water is used as the liquid.  
   
   
       15 . The method according to  claim 9 , wherein at least one of moving speed of the heating section to the substrate, heating temperature by the heating section, temperature of the gas stream, and gas stream speed is controlled to uniformly the heat treatment in the substrate surface.  
   
   
       16 . The method according to  claim 9 , wherein at least one of moving speed of the heating section to the substrate, heating temperature by the heating section, temperature of the gas stream, gas stream speed and substrate temperature is controlled to uniformly the heat treatment in the substrate surface  
   
   
       17 . The method according to  claim 9 , wherein the energy beams is any of ultraviolet radiation, deep-ultraviolet radiation, vacuum ultraviolet radiation, electron beam and X rays.  
   
   
       18 . The method according to  claim 9 , wherein developer is supplied onto the chemically amplified resist film in a state that the liquid exists thereon.  
   
   
       19 .- 39 . (canceled)  
   
   
       40 . A method of forming a pattern, comprising: 
 forming a photo resist film on a substrate;    forming liquid film on the photo resist film surface;    irradiating energy beams to the photo resist film via the liquid film to form a latent image in the photo resist film; and    developing the photo resist film formed with the latent image,    wherein the surface of the photo resist film being not dried until developing is carried out after the liquid film is formed.    
   
   
       41 . The method according to  claim 40 , further comprising: 
 heating the photo resist film at the temperature holding the liquid film on the substrate between the forming the latent image and the forming liquid film.    an electric field being applied to the photo resist film in the heating.    
   
   
       42 . The method according to  claim 41 , wherein the photo resist film is heated by heating the backside of the substrate, and the electric field application is voltage application to an electrode located on an upper portion of the photo resist film.  
   
   
       43 . The method according to  claim 41 , wherein the electric field applied to the photo resist film is alternating current.  
   
   
       44 . The method according to  claim 40 , wherein the wavelength of the energy beams is generally longer than 193 nm.  
   
   
       45 . The method according to  claim 40 , wherein the wavelength of the energy beams is generally 157 nm, and the liquid film consists of fluorine oil.  
   
   
       46 . The method according to  claim 40 , wherein the development is carried out in a manner of supplying developer to the photo resist film while relatively moving a developer supply section, which sucks the supplied developer, to the photo resist film.  
   
   
       47 . A method of forming a pattern, comprising: 
 forming a chemically amplified resist film on a substrate;    forming liquid film on the chemically amplified resist film surface;    irradiating energy beams to the chemically amplified resist film via the liquid film to form a latent image therein;    heating the chemically amplified resist film formed with the latent image, and    developing the chemically amplified resist film heated,    the surface of the photo resist film being not dried until developing is carried out after the liquid film is formed.    
   
   
       48 . The method according to  claim 47 , wherein the wavelength of the energy beams is generally longer than 193 nm.  
   
   
       49 . The method according to  claim 47 , wherein the wavelength of the energy beams is generally 157 nm, and the liquid film consists of fluorine oil.  
   
   
       50 . The method according to  claim 47 , wherein the heating section heating part of the resist films is moved relatively to the substrate in the heating; and 
 forming a liquid stream between under surface of the heating section and upper surface of the chemically amplified resist film in the moving.    
   
   
       51 .- 52 . (canceled)