Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond

Abstract

A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH 3 SiH 3 , and N 2 O.

1 . A method comprising depositing on a substrate a plurality of layers, wherein the plurality of layers comprises a low dielectric constant oxidized organosilane layer comprising carbon, wherein the low dielectric constant oxidized organosilane layer is deposited in a plasma enhanced process from a mixture comprising an organosilane compound and an oxidizing gas and the carbon content of the low dielectric constant oxidized organosilane layer is from 1% to 50% by atomic weight, a layer selected from the group consisting of parylene, FSG, and silicon oxide layers, and a top layer of the plurality of layers that is a photoresist.  
   
   
       2 . The method of  claim 1 , wherein the low dielectric constant oxidized organosilane layer is between two dielectric layers in the plurality of layers.  
   
   
       3 . The method of  claim 1 , wherein the low dielectric constant oxidized organosilane layer is deposited in the presence of RF power and the organosilane compound includes the structure: