Manufacturing method of semiconductor device and semiconductor manufacturing device

Abstract

A manufacturing method of a semiconductor device, comprises; a process of heat-treating a semiconductor substrate under the ordinary pressure and in an oxidizing atmosphere; and a process of heat-treating the semiconductor substrate under the ordinary pressure and in an inert atmosphere, wherein heat-treating time or heat-treating temperature in heat treatment in the oxidizing atmosphere is changed based on the fluctuation of atmospheric pressure, and the heat-treating time in the inert atmosphere is determined based on the heat-treating time or the heat-treating temperature in the oxidizing atmosphere.

1 . A manufacturing method of a semiconductor device, comprising: 
 treating a semiconductor substrate in a semiconductor manufacturing device under a first pressure,    a length of a period from a first time at which the treating of the semiconductor substrate commences to a second time at which the treating of the semiconductor substrate is completed being changed according to an atmospheric pressure.    
   
   
       2 . The manufacturing method of a semiconductor device according to  claim 1 , the atmospheric pressure being monitored by the atmospheric pressure sensor.  
   
   
       3 . The manufacturing method of a semiconductor device according to  claim 1 , the atmospheric pressure being a pressure outside of the semiconductor manufacturing device.  
   
   
       4 . The manufacturing method of a semiconductor device according to  claim 1 , the treating of the semiconductor substrate being carried out by heating the semiconductor substrate.  
   
   
       5 . The manufacturing method of a semiconductor device according to  claim 1 , the treating o the semiconductor substrate in the first atmosphere being carried out in the presence of oxygen.  
   
   
       6 . The manufacturing method of a semiconductor device according to  claim 1 , further comprising: 
 treating the semiconductor substrate in the semiconductor manufacturing device, the treating being carried out in the presence of inert gas.    
   
   
       7 . A semiconductor manufacturing device, comprising: 
 a reaction chamber; and    an atmospheric pressure sensor;    the semiconductor manufacturing device being configured such that a length of a period from a first time at which the treating of the semiconductor substrate commences in the reaction chamber to a second time at which the treating of the semiconductor substrate is completed being changed according to an atmospheric pressure monitored by the atmospheric pressure sensor.