US2008060930A1PendingUtilityA1

Method for manufacturing magnetic head device

Assignee: FUJITSU LTDPriority: Sep 12, 2006Filed: Apr 23, 2007Published: Mar 13, 2008
Est. expirySep 12, 2026(~0.1 yrs left)· nominal 20-yr term from priority
Inventors:Tsutomu Komuro
C23C 14/5806C23C 14/584
55
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A method for manufacturing a magnetic head device that includes a soft magnetic layer includes the steps of forming a plating base layer in the soft magnetic layer through sputtering, and applying, during the forming step, a magnetic field in a direction parallel to an orientation fringe of a wafer in which the magnetic head device is formed.

Claims

exact text as granted — not AI-modified
1 . A method for manufacturing a magnetic head device that includes a soft magnetic layer, said method comprising the steps of:
 forming a plating base layer in the soft magnetic layer through sputtering; and   applying, during said forming step, a magnetic field in a direction parallel to an orientation fringe of a wafer in which the magnetic head device is formed.   
     
     
         2 . A method according to  claim 1 , wherein the soft magnetic layer is a shield layer that shields an external magnetic field. 
     
     
         3 . A method according to  claim 1 , further comprising the steps of:
 forming the soft magnetic layer using the plating base layer through electroplating; and   applying the magnetic field in the direction during said soft magnetic field forming step.   
     
     
         4 . A method according to  claim 1 , further comprising the step of heat-treating the wafer in the magnetic field having the same direction as the direction. 
     
     
         5 . A method according to  claim 4 , further comprising the step of applying the magnetic field to the wafer in a direction different from the direction at a room temperature, followed by said heat-treating step. 
     
     
         6 . A method according to  claim 5 , wherein said heat-treating step is performed at least once whenever the step of applying the magnetic field at the room temperature is performed plural times. 
     
     
         7 . A method according to  claim 4 , further comprising the step of heat-treating the wafer in a nonmagnetic field, followed by said heat-treating step in the magnetic field. 
     
     
         8 . A method according to  claim 7 , wherein said heat-treating step in the magnetic field is performed at least once whenever said heat-treating step in the nonmagnetic field is performed plural times. 
     
     
         9 . A method according to  claim 7 , wherein said heat-treating step in the magnetic field has a temperature higher than that of said heat-treating step in the nonmagnetic field. 
     
     
         10 . A method according to  claim 1 , wherein the magnetic head device is a composite head device that includes a write head device and a read head device.

Join the waitlist — get patent alerts

Track US2008060930A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.