Vertical semiconductor light-emitting device and method of manufacturing the same

Abstract

Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer.

1 . A method of manufacturing a vertical semiconductor light-emitting device, the method comprising:
 sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer;   forming first electrode layers on the upper clad layer;   forming a metal support layer on each of the first electrode layers and forming a trench between the first electrode layers; and   removing the substrate and forming a second electrode layer on the lower clad layer.   
     
     
         2 . The method of  claim 1 , wherein the substrate is a sapphire substrate. 
     
     
         3 . The method of  claim 1 , wherein the lower clad layer and the upper clad layer include a nitrification gallium-based material. 
     
     
         4 . The method of  claim 1 , wherein the active layer is formed of multi quantum wall (MQW) structure of InGaN/GaN. 
     
     
         5 . The method of  claim 1 , wherein forming the metal support layer includes:
 forming a seed layer on the upper clad layer and on a surface of each of the first electrode layers;   forming a photoresist (PR) layer on the seed layer between the first electrode layers;   forming a metal support layer on the seed layer corresponding to each of the first electrode layers; and   removing the PR layer and forming a trench in a region from which the PR layer is removed.   
     
     
         6 . The method of  claim 5 , wherein the trench is formed using a reactive ion etching (RIE) process. 
     
     
         7 . The method of  claim 1 , wherein removing the substrate and the forming of the second electrode layer includes:
 forming a filling layer including an adhesion material on the trench region and on the surface of each of the metal support layers;   attaching one of glass, silicon (Si) or sapphire onto the filling layer to form a bonding layer; and   removing the substrate.   
     
     
         8 . The method of  claim 7 , wherein the filling layer is formed of wax. 
     
     
         9 . The method of  claim 7 , wherein the filling layer is removed using acetone. 
     
     
         10 . The method of  claim 1 , wherein the substrate is separated from the lower clad layer by irradiating laser light having a wavelength less than about 370 nm. 
     
     
         11 . The method of  claim 7 , wherein the substrate is separated from the lower clad layer by irradiating laser light having a wavelength less than about 370 nm. 
     
     
         12 . The method of  claim 1 , wherein the second electrode layer is an n-type conductive material. 
     
     
         13 . The method of  claim 1 , wherein the metal support layer is formed using plasma vapor deposition (PVD) or chemical vapor deposition (CVD). 
     
     
         14 . A vertical semiconductor light-emitting device, comprising:
 a first electrode layer on a semiconductor layer;   a seed layer and a metal support layer on the first electrode layer;   a second electrode layer below the semiconductor layer; and   an insulating support layer that separates the vertical semiconductor light-emitting device from another vertical semiconductor light-emitting device.   
     
     
         15 . The vertical semiconductor light-emitting device of  claim 14 , wherein the semiconductor layer includes a lower clad layer, an active layer and an upper clad layer. 
     
     
         16 . The vertical semiconductor light-emitting device of  claim 14 , wherein the second electrode layer is an n-type conductive material. 
     
     
         17 . The vertical semiconductor light-emitting device of  claim 14 , wherein the first electrode layer is made of a p-metal. 
     
     
         18 . The vertical semiconductor light-emitting device of  claim 14 , wherein the metal support layer is made of one of the group including Cu, Cr, Ni, Ag, Au, Mo, Pd, W and Al. 
     
     
         19 . The vertical semiconductor light-emitting device of  claim 14 , wherein the seed layer is used to form the metal support layer and is made of one of the group including Cr, Ti, Au and Ni. 
     
     
         20 . The vertical semiconductor light-emitting device of  claim 14 , wherein the insulating support layer is an adhesive polymer film.