Processing method, manufacturing method of semiconductor device, and processing apparatus

Abstract

A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

1 - 22 . (canceled)  
   
   
       23 . A manufacturing method of a semiconductor device, comprising: 
 preparing a substrate material in which an alignment mark is formed in or on a semiconductor substrate;    forming an anti-reflection film and subsequently forming resist film on the anti-reflection film;    relatively scanning a first exposure light against the whole first region to be exposed on the substrate to selectively remove or reduce the anti-reflection film of the whole first region to be exposed including a region above which the alignment mark is formed;    exposing irradiating a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively remove or reduce the whole second region to be exposed of the anti-reflection film;    processing the anti-reflection film and subsequently transferring the substrate material to an exposure apparatus for forming a latent image;    performing alignment adjustment by the alignment mark in the exposure apparatus;    forming a latent image of a semiconductor circuit on the resist film after the alignment adjustment;    developing the resist film in which the latent image is formed to form a resist pattern; and    using the resist pattern to process the substrate material.    
   
   
       24 . A processing method for exposing each exposing unit region with an energy ray to selectively remove or reduce a whole region to be exposed of the film formed on a substrate, comprising: 
 exposing the exposing unit region of the substrate with the energy ray;    observing a gas member generated by exposure of the energy ray above exposing unit region;    measuring a size of the gas member; and    exposing the film with the next energy ray, when the size of the gas member is smaller than a defined value.    
   
   
       25 . The processing method according to  claim 24 , further comprising: relatively scanning the energy ray whose exposure region is smaller than the whole region to be exposed against the whole region to be exposed.  
   
   
       26 . The processing method according to  claim 24 , wherein a shape of the exposure region of the energy ray on the substrate is a slit or dot shape.  
   
   
       27 . The processing method according to  claim 24 , further comprising: exposing the energy ray in a state in which a solution or gas is passed onto the exposure region of the energy ray on the substrate.  
   
   
       28 . (canceled)  
   
   
       29 . The processing method according to  claim 24 , wherein the film to be exposed comprises an anti-reflection film, resist film, polyimide, silicon nitride film, silicon carbide film, metal film, or resin insulating film.  
   
   
       30 . The processing method according to  claim 24 , wherein the substrate has an alignment mark or a bar in bar mark formed below the whole region to be exposed of the film.  
   
   
       31 . The processing method according to  claim 24 , wherein a contour length of the exposure region of the energy ray on the substrate is 180 μm or less.  
   
   
       32 . (canceled)  
   
   
       33 . The processing method according to  claim 31 , further comprising: relatively scanning the energy ray whose exposure region is smaller than the whole region to be exposed against the whole region to be exposed.  
   
   
       34 . The processing method according to  claim 31 , wherein a shape of the exposure region of the energy ray on the substrate is a slit or dot shape.  
   
   
       35 . The processing method according to  claim 31 , further comprising: exposing the energy ray in a state in which a solution or gas is passed onto the exposure region of the energy ray on the substrate.  
   
   
       36 . (canceled)  
   
   
       37 . The processing method according to  claim 31 , wherein the film to be exposed comprises an anti-reflection film, resist film, polyimide, silicon nitride film, silicon carbide film, metal film, or resin insulating film.  
   
   
       38 . The processing method according to  claim 31 , wherein the substrate has an alignment mark or a bar in bar mark formed below the whole region to be exposed of the film.  
   
   
       39 .- 81 . (canceled)  
   
   
       82 . A processing method comprising: 
 forming a first film on a substrate;    forming a second film on the first film;    selectively exposing the films on the substrate with a first energy ray; and    maintaining at least a part of the second film of the whole region to be exposed with the first energy ray, while exposing the first film,    wherein the processing of the first film comprises: vaporizing the first film; or changing a transmittance.    
   
   
       83 . The processing method according to  claim 82 , wherein the first film is an anti-reflection film.  
   
   
       84 . The processing method according to  claim 82 , wherein the second film is a resist film.  
   
   
       85 . The processing method according to  claim 82 , further comprising: 
 forming the second film as an intermediate film; and    forming a resist film on the intermediate film.    
   
   
       86 . The processing method according to  claim 85 , wherein the forming of the resist film is performed after exposing the first film with the first energy.  
   
   
       87 . The processing method according to  claim 85 , wherein the intermediate film is a silicon oxide film.  
   
   
       88 . The processing method according to  claim 82 , further comprising: 
 preparing the substrate having an alignment mark;    processing the first film above the alignment mark with the first energy ray;    exposing the alignment mark with a second energy ray to acquire position information of the alignment mark from reflected the second energy ray; and    exposing the resist film with a third energy ray based on the position information to form a desired latent image pattern on the resist film.    
   
   
       89 . The processing method according to  claim 88 , wherein a wavelength of the second energy ray is the same as that of the third energy ray.  
   
   
       90 . (canceled)  
   
   
       91 . The processing method according to  claim 88 , wherein the first energy ray is a light having a wavelength absorbed by the first film.  
   
   
       92 . The processing method according to  claim 82 , wherein the processing of the first film comprises: 
 relatively scanning the first energy ray having a first shape against the first region to be exposed on the substrate; and    exposing a second region to be exposed inside the first region to be exposed with the first energy.    
   
   
       93 . A manufacturing method of a semiconductor device, comprising: 
 preparing a substrate material in which an alignment mark is formed in or on a semiconductor substrate;    forming an anti-reflection film on the substrate material;    forming a resist film on the anti-reflection film;    selectively exposing the resist film of a whole region to be exposed including a region above which the alignment mark is formed with an energy ray;    maintaining at least a part of the resist film of the whole region to be exposed with the first energy ray, while exposing the anti-reflection film,    transferring the substrate material to an exposure apparatus after processing the anti-reflection film;    using the alignment mark to perform alignment adjustment;    forming a latent image of a semiconductor circuit on the resist film after the alignment adjustment; and    developing the resist film to form a resist pattern,    wherein the processing of the anti-reflection film comprises: vaporizing the anti-reflection film; or changing a transmittance.    
   
   
       94 . A manufacturing method of a semiconductor device, comprising: 
 preparing a substrate material in which an alignment mark is formed in or on a semiconductor substrate;    forming an anti-reflection film and intermediate film on the substrate material;    selectively exposing the intermediate film of a whole region to be exposed including a region above which the alignment mark is formed with an energy ray;    maintaining at least a part of the intermediate film of the whole region to be exposed with the first energy ray, while exposing the anti-reflection film;    forming a resist film on the intermediate film after processing the anti-reflection film;    transferring the substrate material in which the resist film is formed to an exposure apparatus;    using the alignment mark in the exposure apparatus to perform alignment adjustment;    forming a latent image of a semiconductor circuit on the resist film after the alignment adjustment;    developing the resist film in which the latent image is formed to form a resist pattern; and    using the resist pattern to process the substrate material,    wherein the exposing of the anti-reflection film comprises: vaporizing the anti-reflection film; or changing a transmittance.    
   
   
       95 .- 108 . (canceled)