Electrical overstress event indicator on electronic circuitry

Abstract

Detecting electrical overstress events in electronic circuitry such as optical emitters. In one example embodiment, a laser includes an active area and a contact region in electrical communication with the active area. A portion of the contact region is configured to manifest a change in a visual attribute of the portion in response to exposure of the portion to an electrical overstress event.

1 . A laser comprising: 
 an active area; and    a contact region in electrical communication with the active area, a portion of the contact region being configured to manifest a change in a visual attribute of the portion in response to exposure of the portion to an electrical overstress event.    
   
   
       2 . The laser as recited in  claim 1 , wherein the contact region is configured to manifest a change in a color of the portion of the contact region in response to exposure of the portion to an electrical overstress event.  
   
   
       3 . The laser as recited in  claim 1 , wherein the contact region is configured to manifest a change in a texture of the portion of the contact region in response to exposure of the portion to an electrical overstress event.  
   
   
       4 . The laser as recited in  claim 1 , wherein the contact region is configured to manifest a change in a color contrast of the portion of the contact region in response to exposure of the portion to an electrical overstress event.  
   
   
       5 . The laser as recited in  claim 1 , wherein the contact region is configured to manifest a change in a color and a texture of the portion of the contact region in response to exposure of the portion to an electrical overstress event.  
   
   
       6 . The laser as recited in  claim 1 , wherein a second portion of the contact region is not configured to manifest a change in a visual attribute of the second portion in response to exposure of the second portion to an electrical overstress event.  
   
   
       7 . The laser as recited in  claim 1 , wherein the laser comprises a VCSEL.  
   
   
       8 . An optoelectronic transceiver comprising: 
 a housing;    a ROSA at least partially positioned within the housing; and    a TOSA at least partially positioned within the housing and including the laser as recited in  claim 1 .    
   
   
       9 . A laser comprising: 
 an active area;    a contact region in electrical communication with the active area; and    a sacrificial element that is electrically connected to the active area, the sacrificial element being configured to be visibly altered in response to exposure of the contact region to an electrical overstress event.    
   
   
       10 . The laser as recited in  claim 9 , wherein the sacrificial element comprises a resistor circuit.  
   
   
       11 . The laser as recited in  claim 10 , wherein the resistor circuit is configured to change in appearance due to carbonization of plastic around the resistor circuit in response to exposure of the contact region to an electrical overstress event.  
   
   
       12 . The laser as recited in  claim 10 , wherein the resistor circuit is configured to change in appearance due to metal reflow around the resistor circuit in response to exposure of the contact region to an electrical overstress event.  
   
   
       13 . The laser as recited in  claim 10 , wherein the resistor circuit is configured to change in appearance due to discoloration of metal around the resistor circuit in response to exposure of the contact region to an electrical overstress event.  
   
   
       14 . The laser as recited in  claim 9 , wherein the laser comprises a VCSEL.  
   
   
       15 . An optoelectronic transceiver comprising: 
 a housing;    a ROSA at least partially positioned within the housing; and    a TOSA at least partially positioned within the housing and including the laser as recited in  claim 9 .    
   
   
       16 . A laser comprising: 
 an active area;    a contact region in electrical communication with the active area; and    a means for visibly manifesting exposure of the contact region to an electrical overstress event.    
   
   
       17 . The laser as recited in  claim 16 , wherein the laser comprises a VCSEL.  
   
   
       18 . An optoelectronic transceiver comprising: 
 a housing;    a ROSA at least partially positioned within the housing; and    a TOSA at least partially positioned within the housing and including a laser, the laser comprising: 
 an active area;  
 a contact region in electrical communication with the active area; and  
 a means for visibly manifesting exposure of the contact region to an electrical overstress event.  
   
   
   
       19 . The optoelectronic transceiver as recited in  claim 18 , wherein the laser comprises a VCSEL.  
   
   
       20 . The optoelectronic transceiver as recited in  claim 18 , wherein the means for visibly manifesting exposure is configured to manifest a change in a color of a portion of the contact region in response to exposure of the contact region to an electrical overstress event.  
   
   
       21 . The optoelectronic transceiver as recited in  claim 18 , wherein the means for visibly manifesting exposure is configured to manifest a change in a texture of a portion of the contact region in response to exposure of the contact region to an electrical overstress event.  
   
   
       22 . The optoelectronic transceiver as recited in  claim 18 , wherein the means for visibly manifesting exposure comprises a sacrificial element that is configured to be visibly altered in response to exposure of the contact region to an electrical overstress event.  
   
   
       23 . The optoelectronic transceiver as recited in  claim 22 , wherein the sacrificial element comprises a resistor circuit.