Semiconductor integrated circuit device

Abstract

With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

1 - 18 . (canceled)  
   
   
       19 . A semiconductor integrated circuit device comprising: 
 first and second field effect transistors;    a first plug connected to the first field effect transistor;    a second plug connected to the second field effect transistor;    a storage film formed over the first and second electrodes and continuing between the first and second electrodes;    a conductive film formed over the storage layer and continuing between the first and second electrodes;    a contact connected to the conductive layer,    wherein the storage film includes a material with resistance values changing by heating treatments, and    wherein the first and second plugs are made up by filling up a contact hole with a conductive material, the contact hole being formed in an insulation film formed over the first and second field effect transistors.