Sawing method for a wafer

Abstract

The present invention relates to a sawing method for a wafer. The sawing method of the invention comprises: (a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines; (b) coating a protection layer on the active surface and the sawing lines; (c) taping a grinding tape on a surface of the protection layer; (d) grinding the back surface of the wafer to thin the wafer; (e) removing the grinding tape; and (f) sawing the wafer to form a plurality of dice. Whereby, the problems of die cracking, die scratching, die contamination and peeling of the surface of the sawing lines can be avoided.

1 . A sawing method for a wafer, comprising the following steps of:
 (a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines;   (b) coating a protection layer on the active surface and the sawing lines;   (c) taping a grinding tape on a surface of the protection layer;   (d) grinding the back surface of the wafer to thin the wafer;   (e) removing the grinding tape; and   (f) sawing the wafer to form a plurality of dice.   
     
     
         2 . The sawing method according to  claim 1 , wherein the protection layer is coated on the active surface of the wafer by using a spin-coating method in step (b). 
     
     
         3 . The sawing method according to  claim 1 , wherein the protection layer is an adhesive. 
     
     
         4 . The sawing method according to  claim 3 , wherein the adhesive is epoxy. 
     
     
         5 . The sawing method according to  claim 1 , further comprising a baking step for solidifying the protection layer after step (b). 
     
     
         6 . The sawing method according to  claim 1 , further comprising a step for removing the protection layer after step (f). 
     
     
         7 . The sawing method according to  claim 6 , wherein the protection layer is removed by using a solvent.