Atomic layer deposition process

Abstract

In one embodiment, a method for depositing a material on a substrate during an atomic layer deposition (ALD) process is provided which includes positioning the substrate on a substrate support within a process chamber, flowing a carrier gas into an expanding channel to form a circular flow of the carrier gas, exposing the substrate to the circular flow, pulsing a first reactant gas into the circular flow, and depositing a material onto the substrate. The method further provides that the process chamber has a chamber lid containing a centrally positioned expanding channel, a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, at least two gas inlets in fluid communication with the expanding channel, and at least two conduits positioned to provide a gas flow having a circular pattern within the expanded channel.

1 . A method for depositing a material layer on a substrate surface, comprising: 
 positioning a substrate on a substrate support within a process chamber comprising a chamber body and a chamber lid, wherein the chamber lid comprises: 
 an expanding channel at a central portion of the chamber lid;  
 a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate;  
 a first conduit coupled to a first gas inlet; and  
 a second conduit coupled to a second gas inlet, wherein the first and second gas inlets are in fluid communication with the expanding channel, and the first and second conduits are positioned to provide a gas flow comprising a circular pattern within the expanded channel;  
   flowing a carrier gas into the expanding channel to form a circular flow of the carrier gas;    exposing the substrate to the circular flow of the carrier gas;    pulsing a first reactant gas into the circular flow of the carrier gas from the first gas inlet; and    depositing a material onto the substrate.    
   
   
       2 . The method of  claim 1 , further comprising pulsing a second reactant gas into the circular flow of the carrier gas from the second gas inlet.  
   
   
       3 . The method of  claim 1 , wherein the circular flow of the carrier gas comprises a gas flow pattern selected from the group consisting of vortex, helix, spiral, and derivatives thereof.  
   
   
       4 . The method of  claim 3 , wherein the carrier gas comprises a gas selected from the group consisting of argon, nitrogen, hydrogen, helium, and combinations thereof.  
   
   
       5 . The method of  claim 1 , wherein the deposited material comprises tantalum, titanium, tungsten, copper, alloys thereof, or combinations thereof.  
   
   
       6 . The method of  claim 5 , wherein the deposited material comprises tantalum nitride, tantalum silicon nitride, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride, copper aluminum, alloys thereof, or combinations thereof.  
   
   
       7 . The method of  claim 3 , wherein the deposited material comprises tungsten or tungsten nitride.  
   
   
       8 . The method of  claim 2 , wherein the deposited material comprises tantalum nitride.  
   
   
       9 . The method of  claim 8 , wherein the first reactant gas comprises a tantalum precursor selected from the group consisting of pentakis(dimethylamido) tantalum, pentakis(diethylamido) tantalum, pentakis(ethylmethylamido) tantalum, tertbutylimido tris(diethylamido) tantalum, and derivatives thereof.  
   
   
       10 . The method of  claim 8 , wherein the second reactant gas comprises a nitrogen precursor selected from the group consisting of ammonia, hydrazine, dimethylhydrazine, tertbutylhydrazine, a nitrogen plasma source, and derivatives thereof.  
   
   
       11 . The method of  claim 10 , wherein the nitrogen plasma source comprises nitrogen, a nitrogen and hydrogen mixture, ammonia, or hydrazine.  
   
   
       12 . The method of  claim 8 , wherein the first reactant gas comprises pentakis(dimethylamido) tantalum and the second reactant gas comprises ammonia.  
   
   
       13 . A method for depositing a material layer on a substrate surface, comprising: 
 positioning a substrate on a substrate support within a process chamber comprising a chamber body and a chamber lid, wherein the chamber lid comprises: 
 an expanding channel at a central portion of the chamber lid;  
 a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate;  
 a first conduit coupled to a first gas inlet; and  
 a second conduit coupled to a second gas inlet, wherein the first and second gas inlets are in fluid communication with the expanding channel, and the first and second conduits are positioned to provide a gas flow comprising a circular pattern within the expanded channel;  
   flowing a first reactant gas from the first gas inlet;    flowing a second reactant gas from the second gas inlet; and    exposing the substrate sequentially to the first and second reactant gases to deposit a material onto the substrate, wherein the first and second reactant gases comprise a circular gas flow.    
   
   
       14 . The method of  claim 13 , wherein the circular gas flow comprises a gas flow pattern selected from the group consisting of vortex, helix, spiral, and derivatives thereof.  
   
   
       15 . A method for depositing a material layer on a substrate surface, comprising: 
 positioning a substrate on a substrate support within a process chamber comprising a gas delivery system enabled to form a gas flow comprising a circular pattern;    flowing a carrier gas into the process chamber while forming a circular flow of the carrier gas;    exposing the substrate to the circular flow of the carrier gas;    pulsing a first reactant gas into the circular flow of the carrier gas; and    depositing a material onto the substrate.    
   
   
       16 . The method of  claim 15 , further comprising pulsing a second reactant gas into the circular flow of the carrier gas.  
   
   
       17 . The method of  claim 15 , wherein the circular flow of the carrier gas comprises a gas flow pattern selected from the group consisting of vortex, helix, spiral, and derivatives thereof.  
   
   
       18 . The method of  claim 17 , wherein the deposited material comprises tantalum, titanium, tungsten, copper, alloys thereof, or combinations thereof.  
   
   
       19 . The method of  claim 18 , wherein the deposited material comprises tungsten or tungsten nitride.  
   
   
       20 . The method of  claim 18 , wherein the deposited material comprises tantalum nitride.