Rare earth element-doped silicon oxide film electroluminescence device

Abstract

A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.

1 - 17 . (canceled)  
   
   
       18 . An electroluminescence (EL) device comprising: 
 a bottom substrate;    a silicon-rich silicon oxide (SRSO) film including: 
 a first thickness overlying the substrate doped with a first concentration of a rare earth (RE) element;  
 a second thickness, overlying the first thickness, doped with a second concentration of the RE element; and,  
   a top electrode overlying the SRSO film.    
   
   
       19 . An electroluminescence (EL) device comprising: 
 a bottom substrate;    a silicon-rich silicon oxide (SRSO) film including: 
 a first thickness overlying the substrate doped with a first rare earth (RE) element;  
 a second thickness, overlying the first thickness, doped with a second RE element; and,  
   a top electrode overlying the SRSO film.    
   
   
       20 . A silicon-rich silicon oxide (SRSO) film comprising: 
 a first thickness doped with a first concentration of a rare earth (RE) element; and,    a second thickness, overlying the first thickness, doped with a second concentration of the RE element.    
   
   
       21 . A silicon-rich silicon oxide (SRSO) film comprising: 
 a first thickness doped with a first rare earth (RE) element; and,    a second thickness, overlying the first thickness, doped with a second RE element.