Electrochemical processing apparatus and method of processing a semiconductor device

Abstract

An electrochemical processing apparatus is provided, in which a substrate and an anode placed in a chamber are partitioned into a cathode region including the substrate and an anode region including the anode by placing a multi-layered structure of a filtration film and a cation exchange film so that the filtration film is positioned on the substrate side. A plating solution containing additives is introduced into the cathode region, whereby a substrate is plated.

1 . An electrochemical processing apparatus, comprising:
 a chamber; and   a multi-layered structure provided to partition the chamber into an anode region and a cathode region, said structure including a filtration film facing said cathode region and a cation exchange film facing said anode region.   
     
     
         2 . The apparatus according to  claim 1 , wherein the filtration film and the cation exchange film are provided in contact with each other. 
     
     
         3 . The apparatus according to  claim 1 , wherein the filtration film has a hole diameter of 0.5 μm or less. 
     
     
         4 . The apparatus according to  claim 1 , wherein:
 the chamber has a plating solution containing a leveler, an accelerator, and a suppressor introduced into the cathode region; and   the multi-layered structure is configured to suppress transmission of the accelerator, the leveler, and the suppressor.   
     
     
         5 . The apparatus according to  claim 1 , wherein the anode is made of copper. 
     
     
         6 . The apparatus according to  claim 5 , wherein the multi-layered structure is configured to allow transmission of copper ions. 
     
     
         7 . A chamber including an anode and a cathode, a filtration film provided in the chamber between the anode and the cathode, and
 a cation exchange film provided in the chamber between the   
     
     
         8 . The chamber according to  claim 7 , the cathode is a filtration film and the anode.
 semiconductor wafer.   
     
     
         9 . A method of plating a conductive film by use of an electrochemical processing apparatus which includes a chamber with an anode, a cathode, a filtration film between the anode and the cathode and a cation exchange film between the filtration film and the anode, the method comprising plating a semiconductor substrate into the chamber as the cathode,
 applying an electric power between the anode and the semiconductor substrate to plate a conductive film on the semiconductor substrate.   
     
     
         10 . The method according to  claim 9 , further comprising introducing a plating solution containing a leveler, an accelerator, and a suppressor into the chamber. 
     
     
         11 . The method according to  claim 10 , wherein the anode comprising a copper so that a copper film is plated on the semiconductor substrate.