Inductively coupled plasma system with internal coil

Abstract

Embodiments of the inventive technology may be a plasma system that comprises a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and a dielectric form that itself is established within the process chamber and that defines an internal volume in which at least a portion of a coil is established. In various embodiments, the dielectric form has two ends supported by at least one support member at two support sites and/or has a form centerline in a system with a substrate support adapted to support a substrate with a process surface that defines a process surface plane that is parallel the form centerline.

1 . A plasma system, comprising:
 a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and   a dielectric form:
 established within said process chamber, 
 that has two ends supported by at least one support member at two support sites, and 
 that defines an internal volume; 
   wherein at least a portion of said coil is established in said internal volume.   
   
   
       2 . A plasma system as described in  claim 1  wherein said coil comprises a longitudinal coil. 
   
   
       3 . A plasma system as described in  claim 1  wherein said coil comprises a transverse coil. 
   
   
       4 . A plasma system as described in  claim 1  wherein said coil is a first coil, said dielectric form is a first dielectric form, said internal volume is a first internal volume, and said first coil establishes a first magnetic field in a first direction, and further comprising a second dielectric form established parallel said first dielectric form and defining a second internal volume in which at least a portion of a second coil is established to create a second magnetic field in a direction that is opposite said first direction. 
   
   
       5 . A plasma system as described in  claim 1  wherein said at least one support member comprises two support members. 
   
   
       6 . A plasma system as described in  claim 1  wherein said at least one support member comprises at least one process chamber wall. 
   
   
       7 . A plasma system as described in  claim 1  wherein said dielectric form is a substantially straight dielectric form. 
   
   
       8 . A plasma system as described in  claim 1  further comprising a magnetron. 
   
   
       9 . A plasma system as described in  claim 8  wherein said coil and said magnetron together generate only one plasma. 
   
   
       10 . A plasma system as described in  claim 1  further comprising a chemical vapor deposition element. 
   
   
       11 . A plasma system as described in  claim 1  further comprising an ion source. 
   
   
       12 . A plasma system as described in  claim 1  wherein said dielectric form defines a form centerline and further comprising a substrate that has a process surface defining a process surface plane and wherein said form centerline is substantially parallel said process surface plane. 
   
   
       13 . A plasma system as described in  claim 1  wherein said dielectric form is a substantially horizontal dielectric form. 
   
   
       14 . A plasma system as described in  claim 1  wherein said coil defines a coil centerline and said dielectric form defines a form centerline that is substantially parallel said coil centerline. 
   
   
       15 . A plasma system as described in  claim 1  further comprising a substrate established for processing by said plasma system. 
   
   
       16 . A plasma system, comprising:
 a coil powered by a power source so as to generate or enhance a plasma in a process chamber;   a dielectric form that defines an internal volume and a form centerline; and   a substrate support adapted to support a substrate in said process chamber,   wherein said substrate has a process surface defining a process surface plane,   wherein at least a portion of said coil is established in said internal volume, and   wherein said form centerline is substantially parallel said process surface plane.   
   
   
       17 . A plasma system as described in  claim 16  wherein said coil comprises a longitudinal coil. 
   
   
       18 . A plasma system as described in  claim 16  wherein said coil is a first coil, said dielectric form is a first dielectric form, said internal volume is a first internal volume, and said first coil establishes a first magnetic field in a first direction, and further comprising a second dielectric form established parallel said first dielectric form and defining a second internal volume in which at least a portion of a second coil is established to create a second magnetic field in a direction that is opposite said first direction. 
   
   
       19 . A plasma system as described in  claim 16  wherein said form centerline is substantially straight. 
   
   
       20 . A plasma system as described in  claim 16  wherein said dielectric form has two ends supported by at least one support member at two support sites. 
   
   
       21 . A plasma system as described in  claim 16  further comprising a magnetron. 
   
   
       22 . A plasma system as described in  claim 16  wherein said dielectric form defines a form centerline and further comprising a substrate that has a process surface defining a process surface plane that is substantially parallel said form centerline. 
   
   
       23 . A plasma system as described in  claim 16  wherein said plasma system is a web coater.