Thin-film disposition apparatus

Abstract

A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them over the entire area of their interfacial surfaces, or a large portion thereof.

1 . A plasma apparatus comprising: 
 a chamber comprising a first inside-space, the first inside space including a first sub-space and a second sub-space;    means for evacuating the first inside-space of the chamber;    a member for separating the first sub-space from the second sub-space, wherein said member comprises a first sub-member facing the side of said first sub-space and a second sub-member facing the side of said second sub-space;    the chamber further including a second inside-space between said first sub-member and said second sub-member;    said member has a first though-hole which communicates said first sub-space and said second sub-space in a non-contacting manner with the second inside-space;    said member has a second through-hole which communicates the second inside-space and the second sub-space in a non-contacting manner with the first inside-space;    a first gas inlet for introducing a first gas into the first sub-space;    a second gas inlet for introducing a second gas into the second inside-space; and    means for supplying a high frequency power in the first sub-space.    
     
     
         2 . The plasma apparatus as claimed in  claim 1 , wherein said member comprises two plates spaced from each other and a column structure between the two plates and said first through-hole is pierced through the column structure.  
     
     
         3 . The plasma apparatus as claimed in  claim 1 , wherein said means for supplying a high frequency power in the first sub-space comprises an electrode having a hole.  
     
     
         4 . The plasma apparatus as claimed in  claim 1 , wherein the means for supplying a high frequency power in the first sub-space comprises an electrode not having a hole.  
     
     
         5 . The plasma apparatus as claimed in  claim 1 , wherein said means for supplying a high frequency power in the first sub-space comprises an electrode for supplying a high-frequency power.  
     
     
         6 . The plasma apparatus as claimed in  claim 1 , wherein said first gas comprises oxygen gas and said second gas comprises a precursor gas.  
     
     
         7 . An apparatus for making a thin-film comprising: 
 a chamber comprising a first inside-space having a first sub-space and a second sub-space;    means for evacuating the first inside-space of the chamber;    a member for separating the first sub-space from the second sub-space, wherein said member comprises a first sub-member facing the side of said first sub-space and a second sub-member facing the side of said second sub-space;    The chamber further including a second inside-space between said first sub-member and said second sub-member;    said member has a first though-hole which communicates said first sub-space and said second sub-space in a non-contacting manner with the second inside-space;    said member has a second through-hole which communicates the second inside-space and the second sub-space in a non-contacting manner with the first inside-space;    a first gas inlet for introducing a first gas into the first sub-space;    a second gas inlet for introducing a second gas into the second inside-space; and    means for providing a plasma in the first sub-space.    
     
     
         8 . A method for treating a substrate using said plasma apparatus of  claim 1 .  
     
     
         9 . A method for making a thin-film using said apparatus of  claim 7.