Interposer and electronic device using the same

Abstract

A novel interposer( 10 ) includes a silicon substrate( 12 ), a plurality of through-hole conductors ( 20 ) formed on the silicon substrate, and capacitors ( 15 ) having of upper and lower electrodes ( 14,18 ) formed with land portions, respectively, of the through-hole conductors, and a dielectric layer ( 16 ) formed between both the electrodes. When desired, wiring pattern layers can be formed on a layer separate from the capacitors.

1 . An interposer comprising a capacitor formed on a generally entire surface of a substrate. 
   
   
       2 . The interposer according to  claim 1 , comprising:
 the substrate including a plurality of through-hole conductors;   some of the through hole conductors that have land portions formed with an upper electrode of the capacitors;   some of the remaining of the through-hole conductors that have land portions formed with a lower electrode of the capacitor; and   a dielectric layer interposed between the upper electrodes and the lower electrodes.   
   
   
       3 . The interposer according to  claim 2 , wherein
 some of the through-hole conductors are formed as through-hole conductors for signal on a central portion of the surface of the substrate, and   through-hole conductors for power supply for forming one of the upper and lower electrodes and through-hole conductors for ground for forming the other of the upper and lower electrodes are formed surrounding the through-hole conductors for signal.   
   
   
       4 . The interposer according to  claim 2 , wherein
 some of the through-hole conductors are formed as through-hole conductors for signal on a peripheral region of the surface of the substrate, and   through-hole conductors for power supply for forming one of the upper and lower electrodes and through-hole conductors for ground for forming the other of the upper and lower electrodes are formed inside of the peripheral region of the surface of the substrate.   
   
   
       5 . The interposer according to  claim 1  or  2 , further comprising a wiring layer that is formed on at least one insulating layer disposed above the capacitors. 
   
   
       6 . The interposer according to  claim 1  or  2 , wherein the substrate is a silicon substrate. 
   
   
       7 . The interposer according to  claim 1  or  2 , wherein the through-hole conductors are made of copper. 
   
   
       8 . The interposer according to  claim 1  or  2 , wherein the upper and lower electrodes are made of nickel or platinum. 
   
   
       9 . The interposer according to  claim 1  or  2 , wherein the dielectric layer is made of a ferroelectric substance. 
   
   
       10 . The interposer according to  claim 1  or  2 , wherein the dielectric layer is made of barium titanate. 
   
   
       11 . The interposer according to  claim 1  or  2 , wherein at least one surface of the interposer is covered with a solder resist layer or an insulating resin layer. 
   
   
       12 . An electronic device comprising
 an IC chip;   a package substrate; and   an interposer, according to  claim 1  or  2 , interposed between the IC chip and the package substrate and electrically connected to the both,   wherein the interposer provides capacitors.