Nitride semiconductor light emitting device array

Abstract

A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures.

1 . A nitride semiconductor light emitting device array comprising:
 a dielectric layer formed on a first conductivity lower nitride semiconductor layer and having a plurality of windows formed therethrough; and   a plurality of hexagonal pyramid light emission structures each selectively grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer, each of the hexagonal pyramid light emission structures comprising a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order,   wherein the plurality of windows are disposed in a triangular arrangement such that side surfaces of one of the hexagonal pyramid light emission structures face side surfaces other adjacent ones of the hexagonal pyramid light emission structures, and   wherein a distance from a base of one of the hexagonal pyramid light emission structures to a base of another adjacent one of the hexagonal pyramid light emission structures is less than 0.3 times an interval from a center of the window of one of the hexagonal pyramid light emission structures to a center of the window of another adjacent one of the hexagonal pyramid light emission structures.   
     
     
         2 . The nitride semiconductor light emitting device array according to  claim 1 , wherein the side surface of each of the hexagonal pyramid light emission structure is in [11-20] direction. 
     
     
         3 . The nitride semiconductor light emitting device array according to  claim 1 , wherein a sum of side surface areas of the plurality of hexagonal pyramid light emission structures is greater than a total growth surface area of the dielectric layer. 
     
     
         4 . The nitride semiconductor light emitting device array according to  claim 1 , wherein adjacent ones of the hexagonal pyramid light emission structures abut each other at bases thereof. 
     
     
         5 . The nitride semiconductor light emitting device array according to  claim 1 , further comprising:
 a substrate having the first conductivity lower nitride semiconductor layer formed thereon;   a first electrode formed on a surface of the first conductivity lower nitride semiconductor layer;   a light-transmitting conductive layer formed on the second conductivity nitride semiconductor layer; and   a second electrode formed on a surface of the light transmitting conductive layer.   
     
     
         6 . The semiconductor light emitting device array according to  claim 5 , wherein the substrate comprises one selected from the group consisting of a sapphire substrate, a SiC substrate and a Si substrate. 
     
     
         7 . The nitride semiconductor light emitting device array according to  claim 1 , further comprising:
 a light-transmitting conductive layer with the first conductivity lower nitride semiconductor layer formed thereon;   a first electrode formed on a surface of the light-transmitting conductive layer;   a reflective electrode layer formed on the second conductivity nitride semiconductor layer; and   a conductive support structure formed on the reflective electrode layer to function as a second electrode.   
     
     
         8 . A nitride semiconductor light emitting device array comprising:
 a dielectric layer formed on a first conductivity lower nitride semiconductor layer and having a plurality of windows formed therethrough at a predetermined interval in rows and columns in a rectangular arrangement; and   a plurality of hexagonal pyramid light emission structures each selectively grown from a surface of the first conductivity lower nitride semiconductor layer exposed by each of the windows and onto a peripheral portion of each of the windows of the dielectric layer, each of the hexagonal pyramid light emission structure comprising a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order,   wherein one of the hexagonal pyramid light emission structures has at least one base abutting at least one base of at least one other adjacent hexagonal pyramid light emission structure disposed in one direction of rows and columns, and has at least one edge facing at least one edge of other adjacent ones of the hexagonal pyramid light emitting structures disposed in the other direction of rows and columns.