Microporous Tectosilicate and Method for the Production Thereof

Abstract

The present invention relates to a tectosilicate having an X-ray diffraction pattern in which at least the following reflections occur: Intensity (%) Diffraction angle 2θ/° [Cu K(alpha 1)] 100  9.8-10.2 24-34 11.0-11.4  9-19 15.5-15.9 12-22 19.4-19.6 19-29 19.6-19.8 100% relating to the intensity of the maximum peak in the X-ray diffraction pattern.

1 - 28 . (canceled)  
     
     
         29 . A process for the preparation of a silicate containing at least silicon and oxygen, comprising 
 (1) mixing of silica, or of a silica precursor, or of silica and a silica precursor with an aqueous solution containing at least one R 1 R 2 R 3 R 4 N + -comprising tetraalkylammonium compound and at least one base;    (2) heating of the colloidal solution obtained according to (1) to a temperature in the range of from greater than the boiling point of the colloidal solution under the chosen pressure to 180° C. at normal pressure to give a suspension containing at least one silicate,    wherein R 1  and R 2  are methyl and both R 3  and R 4  are n-propyl.    
     
     
         30 . The process as claimed in  claim 29 , wherein the at least one R 1 R 2 R 3 R 4 N + -comprising tetraalkylammonium compound contains a basic anion.  
     
     
         31 . The process as claimed in  claim 30 , wherein the basic anion is a hydroxide ion.  
     
     
         32 . The process as claimed in  claim 29 , wherein the aqueous solution employed according to (1) contains dimethyldipropylammonium hydroxide (DMDPAH).  
     
     
         33 . The process as claimed in  claim 29 , wherein the colloidal solution obtained according to (1) contains SiO 2 , DMDPAH and water in the weight ratios SiO 2 :DMDPAH:water of 1:(0.45-0.55):(8-12).  
     
     
         34 . The process as claimed in  claim 29 , wherein the colloidal solution obtained according to (1) is heated according to (2) at normal pressure to a temperature of from 100 to 180° C.  
     
     
         35 . The process as claimed in  claim 29 , wherein the colloidal solution obtained according to (1) is heated according to (2) for a period of from 12 hours to 30 days.  
     
     
         36 . The process as claimed in  claim 29 , wherein amorphous silica is employed according to (1).  
     
     
         37 . The process as claimed in  claim 29 , additionally comprising 
 (3) separation of the at least one silicate from the suspension obtained according to (2).    
     
     
         38 . The process as claimed in  claim 37 , additionally comprising 
 (4) washing,    or    (5) drying,    or    (4) washing    and    (5) drying    of the silicate obtained according to (3).    
     
     
         39 . The process as claimed in  claim 38 , wherein the silicate is washed according to (4) with water, or is dried according to (5) at a temperature in the range of from room temperature to 80° C., or is washed according to (4) with water and is dried according to (5) at a temperature in the range of from room temperature to 80° C.  
     
     
         40 . The process as claimed in  claim 29 , additionally comprising 
 (6) calcination of the silicate obtained according to (2) to give a tectosilicate.    
     
     
         41 . The process as claimed in  claim 29 , additionally comprising 
 (3) separation of the at least one silicate from the suspension obtained according to (2),    (4) washing,    (5) drying, and    (6) calcination of the silicate obtained according to (5) to give a tectosilicate.    
     
     
         42 . The process as claimed in  claim 40 , wherein the calcination is effected at a temperature in the range of from 300 to 600° C.  
     
     
         43 . A layered silicate obtainable by a process according to  claim 29 .  
     
     
         44 . A layered silicate having an X-ray diffraction pattern comprising at least the following reflections:  
       
         
           
                 
                 
                 
               
                     
                     
                 
                     
                     
                 
                     
                   Intensity (%) 
                   Diffraction angle 2θ/° [Cu K(alpha 1)] 
                 
                     
                     
                 
                     
                   100 
                   8.0-8.4 
                 
                     
                   11-21 
                   11.0-11.4 
                 
                     
                   13-23 
                   13.2-13.6 
                 
                     
                    5-15 
                   18.0-18.4 
                 
                     
                    7-17 
                   18.4-18.8 
                 
                     
                   19-29 
                   19.9-20.0 
                 
                     
                     
                 
                     
                     
                 
             
                
                
                
                
               
               
                
                
                
                
                
                
                
                
               
            
           
         
         wherein 100% relates to the intensity of the maximum peak in the X-ray diffraction pattern.  
       
     
     
         45 . A tectosilicate obtainable by a process according to  claim 40 .  
     
     
         46 . A tectosilicate having an X-ray diffraction pattern comprising at least the following reflections:  
       
         
           
                 
                 
                 
               
                     
                     
                 
                     
                     
                 
                     
                   Intensity (%) 
                   Diffraction angle 2θ/° [Cu K(alpha 1)] 
                 
                     
                     
                 
                     
                   100 
                    9.8-10.2 
                 
                     
                   24-34 
                   11.0-11.4 
                 
                     
                    9-19 
                   15.5-15.9 
                 
                     
                   12-22 
                   19.4-19.6 
                 
                     
                   19-29 
                   19.6-19.8 
                 
                     
                     
                 
                     
                     
                 
             
                
                
                
                
               
               
                
                
                
                
                
                
                
               
            
           
         
         wherein 100% relates to the intensity of the maximum peak in the X-ray diffraction pattern.  
       
     
     
         47 . The tectosilicate as claimed in  claim 46  having a thermal stability of at least 600° C.  
     
     
         48 . The tectosilicate as claimed in  claim 46 , wherein the tectosilicate has 8MR and 10MR channels.  
     
     
         49 . The tectosilicate as claimed in  claim 48 , wherein the 8MR and 10MR pores have a monomodal pore size distribution.  
     
     
         50 . The tectosilicate as claimed in  claim 49 , wherein the pores have a specific surface in the range of from 400 to 600 mg 2 /g, determined according to DIN 66135.  
     
     
         51 . The tectosilicate as claimed in  claim 46 , additionally comprising Al, B, Fe, Ti, Sn, Ge, Zr, V, Nb or two or more thereof.  
     
     
         52 . A molding comprising at least one tectosilicate according to  claim 46 .  
     
     
         53 . A process for the preparation of a molding, comprising 
 (I) preparing of a mixture containing a tectosilicate according to  claim 46  and at least one binder material;    (II) kneading of the mixture;    (III) molding of the kneaded mixture to give at least one molding;    (IV) drying of the at least one molding;    (V) calcining of the at least one dried molding.    
     
     
         54 . Method of employing a tectosilicate according  claim 46  or of a molding comprising at least one tectosilicate according to  claim 46  as a molecular sieve, catalyst, catalyst support or binder thereof, as an adsorbent, pigment, additive in detergents, additive for building materials, for imparting thixotropic properties to coating pastes and finishes, as external and internal lubricant, as flameproofing agent, auxiliary agent and filler in paper products, in bactericidal or fungicidal or herbicidal compositions, for ion exchange, for the production of ceramics, in polymers, in electrical, optical or electrooptical components and switching elements or sensors.  
     
     
         55 . Method of separating at least one alkane and at least one alkene and at least one alkyne, or at least one alkane and at least one alkene, or at least one alkane and at least one alkyne, or at least one alkene and at least one alkyne, or at least one alkane, or at least one alkene, or at least one alkyne from a gas mixture comprising at least two alkanes, or at least two alkenes, or at least two alkynes, or at least one alkane and at least one alkene, or at least one alkane and at least one alkyne, or at least one alkene and at least one alkyne, or at least one alkane and at least one alkene and at least one alkyne, in the presence of a tectosilicate according  claim 46 , or of a molding comprising at least one tectosilicate according to  claim 46 .  
     
     
         56 . The method as claimed in  claim 55 , wherein constitutional isomers and configurational isomers, or constitutional isomers, or configurational isomers are separated.  
     
     
         57 . The method as claimed in  claim 55 , wherein methane and ethane or ethene, propene and butene, or butane and butene, or n-butane and isobutane, or 1-butene and trans-2-butene are separated.  
     
     
         58 . Method of synthesizing a silicate in the presence of a R 1 R 2 R 3 R 4 N + -comprising tetraalkylammonium compound as a structure directing agent, wherein R 1  and R 2  are methyl and both R 3  and R 4  are n-propyl.  
     
     
         59 . An apparatus comprising at least one tectosilicate according to  claim 46  or a molding comprising at least one tectosilicate according to  claim 46 , for the separation of at least one alkane and at least one alkene and at least one alkyne, or of at least one alkane and at least one alkene, or of at least one alkane and at least one alkyne, or of at least one alkene and at least one alkyne, or of at least one alkane, or of at least one alkene, or of at least one alkyne from a gas mixture comprising at least two alkanes, or at least two alkenes, or at least two alkynes, or at least one alkane and at least one alkene, or at least one alkane and at least one alkyne, or at least one alkene and at least one alkyne, or at least one alkane and at least one alkene and at least one alkyne.