Semiconductor device and a method of assembling a semiconductor device

Abstract

A semiconductor device includes a base substrate; a first fixing layer provided on the base substrate; a first semiconductor chip fixed on the first fixing layer; a first substrate provided above the first semiconductor chip; a plurality of first connection members isolated from the first semiconductor chip, electrically connecting to the first substrate with the base substrate; and a first encapsulating layer provided around the first connection members.

1 - 10 . (canceled)  
   
   
       11 . A method of assembling a semiconductor device comprising: 
 providing a first fixing layer on a base substrate;    facing a first substrate to the base substrate, the first substrate attaching a first semiconductor chip under a bottom surface of the first substrate;    fixing the first semiconductor chip to the first fixing layer;    providing a plurality of first connection members between the first substrate and the base substrate so as to connect the first substrate and the base substrate; and    providing a first substrate encapsulating layer around the first connection members.    
   
   
       12 . The method of  claim 11 , wherein the first fixing layer is made one of epoxy resin and acrylic resin.  
   
   
       13 . The method of  claim 11 , wherein an outer contour of the first fixing layer is aligned with a contour of the first semiconductor chip.  
   
   
       14 . The method of  claim 11 , wherein the first fixing layer is a resin sheet.  
   
   
       15 . The method of  claim 11 , wherein the first encapsulating layer is made one of epoxy resin and acrylic resin.  
   
   
       16 . The method of  claim 11 , wherein the first encapsulating layer is a liquid resin.  
   
   
       17 . The method of  claim 11 , wherein the first connection members surround the first semiconductor chip.  
   
   
       18 . The method of  claim 11 , wherein the first connection members are made from a material selected from a group consisting of Pb, Sn—Cu, Sn—Ag, Sn—Ag—Cu, and Sn—Sb.  
   
   
       19 . The method of  claim 11 , wherein the first connection members comprise bump electrodes made of gold.  
   
   
       20 . The method of  claim 11 , further comprising: 
 providing a second fixing layer on the first substrate;    facing a second substrate to the first substrate, the second substrate attaching a second semiconductor chip under a bottom surface of the second substrate;    fixing the second semiconductor chip to the second fixing layer;    providing a plurality of second connection members between the first substrate and the second substrate so as to connect the first substrate to the second substrate; and    providing a second encapsulating layer around the second connection members.