Low-Impurity Organosilicon Product As Precursor For CVD

Abstract

The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

1 . An organosilicon composition comprising: 
 at least one organosilicon selected from the group consisting of: an alkoxysilane and a carboxysilane;    a first concentration of dissolved residual chloride; and    a first concentration of dissolved residual chloride scavenger,    wherein the organosilicon composition has a first K sp (os) defined as the product of [the first concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4 and [the first concentration of the dissolved residual chloride scavenger in parts per million by weight],    wherein the first concentration of dissolved residual chloride is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4, and the first concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4.    
   
   
       2 . The composition of  claim 1  wherein the at least one organosilicon comprises at least one carboxysilane.  
   
   
       3 . The composition of  claim 1  wherein the at least one organosilicon comprises at least one alkoxysilane.  
   
   
       4 . The composition of  claim 2  wherein the carboxysilane is at least one selected from the group consisting of: 
 a) a compound of the formula R 1   n (R 2 C(O)O) 3−n SiH, wherein R 1  is independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2  is independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; and n is 0, 1, or 2;    b) a compound of the formula R 1   n (R 2 C(O)O) 2−n HSi—O—SiHR 3   m (O(O)CR 4 ) 2−m , where R 1  and R 3 are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2  and R 4 are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2;    c) a compound of the formula R 1   n (R 2 C(O)O) 2−n HSi—SiHR 3   m (O(O)CR 4 ) 2−m , where R 1  and R 3  are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2  and R 4  are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2; and    d) a compound of the formula R 1   n (R 2 C(O)O) 2−n HSi—R 5 —SiHR 3   m (O(O)CR 4 ) 2−m  where R 1  and R 3  are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2  and R 4  are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; R 5  is independently C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; n is 1 to 3; and m is 0, 1 or 2.    
   
   
       5 . The composition of  claim 3  wherein the alkoxysilane is at least one selected from the group consisting of: 
 a) a compound of the formula R 1   n (R 2 O) 3−n SiH, where R 1  is independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2  is independently C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; and n is 0, 1, or 2;    b) a compound of the formula R 1   n (R 2 O) 2−n HSi—O—SiHR 3   m (OR 4 ) 2−m , where R 1  and R 3  are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2  and R 4  are independently C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2;    c) a compound of the formula R 1   n (R 2 O) 2−n HSi—SiHR 3   m (OR 4 ) 2−m , where R 1  and R 3  are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated, R 2  and R 4  are independently C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2; and    d) a compound of the formula R 1   n (R 2 O) 2−n HSi—R 5 —SiHR 3   m (OR 4 ) 2−m , where R 1  and R 3  are independently H, C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2  and R 4  are independently C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; R 5  is independently C 1  to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; n is 0 or 1; m is 0, 1 or 2.    
   
   
       6 . The composition of  claim 3  wherein the alkoxysilane is diethoxymethylsilane.  
   
   
       7 . The composition of  claim 6  wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.  
   
   
       8 . (canceled)  
   
   
       9 . (canceled)  
   
   
       10 . (canceled)  
   
   
       11 . The composition of  claim 6  wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.  
   
   
       12 . (canceled)  
   
   
       13 . (canceled)  
   
   
       14 . The composition of  claim 6  wherein the first concentration of dissolved residual chloride is less than 2 ppm and the first concentration of dissolved residual chloride scavenger is less than 5 ppm.  
   
   
       15 . A method for preventing solids formation in an organosilicon material employed in a chemical vapor deposition process, the method comprising the steps of: 
 providing an organosilicon composition comprising:    at least one organosilicon selected from the group consisting of: an alkoxysilane and a carboxysilane;    a first concentration of dissolved residual chloride; and    a first concentration of dissolved residual chloride scavenger,    wherein the organosilicon composition has a first K sp (os) defined as the product of [the first concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4 and [the first concentration of the dissolved residual chloride scavenger in parts per million by weight],    wherein the first concentration of dissolved residual chloride is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4, and the first concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4; and    providing a second organosilicon comprising at least one organosilicon selected from the group consisting of: an alkoxysilane and carboxysilane, a second concentration of dissolved residual chloride, and a second concentration of dissolved residual chloride scavenger,    wherein the second organosilicon has a second K sp (os) defined as the product of [the second concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4, and [the second concentration of the dissolved residual chloride scavenger in parts per million by weight] and    wherein each of the second concentration of dissolved residual chloride and the second concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4.    
   
   
       16 . (canceled)  
   
   
       17 . The method of  claim 15  wherein each of the first and second organosilicon comprises at least one alkoxysilane.  
   
   
       18 . The method of  claim 17  wherein the alkoxysilane is diethoxymethylsilane.  
   
   
       19 . The method of  claim 18  wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.  
   
   
       20 . The method of  claim 19  wherein each of the second concentration of dissolved residual chloride and the second concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.  
   
   
       21 . (canceled)  
   
   
       22 . (canceled)  
   
   
       23 . (canceled)  
   
   
       24 . (canceled)  
   
   
       25 . (canceled)  
   
   
       26 . (canceled)  
   
   
       27 . The method of  claim 18  wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.  
   
   
       28 . The method of  claim 27  wherein each of the second concentration of dissolved residual chloride and the second concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.  
   
   
       29 . A method for purifying an organosilicon composition comprising at least one of an alkoxysilane and a carboxysilane; and dissolved residual chloride, the method comprising the steps of: 
 contacting the organosilicon composition with a stoichiometric excess of a basic chloride scavenger to cause at least a portion of the dissolved residual chloride to precipitate as a chloride salt;    removing the precipitated chloride salt from the organosilicon composition;    contacting the organosilicon composition with an acid gas to form a precipitate comprising a salt of the acid gas upon reaction with the excess basic chloride scavenger; and    removing the salt of the acid gas to form a purified organosilicon product.    
   
   
       30 . The method of  claim 29  wherein the organosilicon comprises at least one carboxysilane.  
   
   
       31 . The method of  claim 29  wherein the organosilicon comprises at least one alkoxysilane.  
   
   
       32 . The method of  claim 31  wherein the alkoxysilane is diethoxymethylsilane.  
   
   
       33 . The method of  claim 32  wherein the purified organosilicon product comprises a first concentration of dissolved residual chloride; and 
 a first concentration of dissolved residual chloride scavenger,    wherein the organosilicon has a first K sp (os) defined as the product of [the first concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4 and [the first concentration of the dissolved residual chloride scavenger in parts per million by weight],    wherein the first concentration of dissolved residual chloride is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4, and the first concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4.    
   
   
       34 . The method of  claim 33  wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.  
   
   
       35 . (canceled)  
   
   
       36 . The method of  claim 33  wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 50% of the square root of the first K sp (os) when X is 1, less than 50% of the cubed root of the first K sp (os) when X is 2, less than 50% of the fourth root of the first K sp (os) when X is 3, or less than 50% of the fifth root of the first K sp (os) when X is 4.  
   
   
       37 . (canceled)  
   
   
       38 . The method of  claim 33  wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.  
   
   
       39 . (canceled)  
   
   
       40 . (canceled)  
   
   
       41 . The method of  claim 33  wherein the first concentration of dissolved residual chloride is less than 2 ppm and the first concentration of dissolved residual chloride scavenger is less than 5 ppm.