Polishing composition and method of polishing with the same

Abstract

A polishing composition comprises: at least one compound selected from tetrazole compounds and derivatives thereof and anthranilic acid compounds and derivatives thereof; abrasive particles comprising associative abrasive particles; and an oxidizing agent.

1 .- 11 . (canceled)  
   
   
       12 . A method of chemical mechanical polishing comprising: 
 bringing a polishing composition into contact with a surface including copper to be polished; and    polishing the surface by moving it relatively to a polishing surface,    wherein the polishing composition comprises:    at least one compound selected from tetrazole compounds and derivatives thereof and anthranilic acid compounds and derivatives thereof;    abrasive particles comprising associative abrasive particles; and    an oxidizing agent,    wherein the associative abrasive particles have an average major axis length in the range of 10 to 30 nm and a degree of association in the range of 1.2 to 4, and    wherein the polishing composition has a pH of 3.5 to 8.    
   
   
       13 . The method of claim  1 , wherein the proportion of the associative abrasive particles in the polishing composition is 10% by volume or higher based on all the abrasive particles.  
   
   
       14 . The method of claim  1 , wherein the proportion of the associative abrasive particles in the polishing composition is 40% by volume or higher based on all the abrasive particles.  
   
   
       15 . The method of claim  1 , wherein the polishing composition further comprises an acid.  
   
   
       16 . The method of claim  1 , wherein the polishing composition further comprises a chelating agent.  
   
   
       17 . The method of claim  1 , wherein the polishing composition further comprises at least one of a surfactant and a hydrophilic polymer.  
   
   
       18 . The method of claim  1 , wherein the polishing composition further comprises an alkali agent and buffer.