Method For Producing Semiconductor Wafer

Abstract

The present invention is a method for producing a semiconductor wafer, comprising at least steps of: epitaxially growing a SiGe layer on a surface of a silicon single crystal wafer that is to be a bond wafer; implanting at least one kind of hydrogen ion and rare gas ion through the SiGe layer, so that an ion implanted layer is formed inside the bond wafer; closely contacting and bonding a surface of the SiGe layer and a surface of a base wafer through an insulator film; then performing delamination at the ion implanted layer, removing a Si layer in a delaminated layer transferred to a side of the base wafer by the delamination, so that the SiGe layer is exposed; and then subjecting the exposed SiGe layer to a heat treatment for enriching Ge under an oxidizing atmosphere and/or a heat treatment for relaxing lattice strain under a non-oxidizing atmosphere. Thereby, a method for producing a semiconductor wafer having a SiGe layer in which lattice relaxation is sufficiently performed and of which surface roughness is suppressed and of which crystallinity is good is provided.

1 .- 11 . (canceled)  
   
   
       12 . A method for producing a semiconductor wafer, comprising at least steps of: 
 epitaxially growing a SiGe layer on a surface of a silicon single crystal wafer that is to be a bond wafer;    implanting at least one kind of hydrogen ion and rare gas ion through the SiGe layer, so that an ion implanted layer is formed inside the bond wafer;    closely contacting and bonding a surface of the SiGe layer and a surface of a base wafer through an insulator film; then    performing delamination at the ion implanted layer;    removing a Si layer in a delaminated layer transferred to a side of the base wafer by the delamination, so that the SiGe layer is exposed; and then    subjecting the exposed SiGe layer to a heat treatment for enriching Ge under an oxidizing atmosphere and/or a heat treatment for relaxing lattice strain under a non-oxidizing atmosphere and/or a heat treatment for relaxing lattice strain under a non-oxidizing atmosphere.    
   
   
       13 . A method for producing a semiconductor wafer, comprising at least steps of: 
 epitaxially growing a plurality of SiGe layers through a Si layer, on a surface of a silicon single crystal wafer that is to be a bond wafer;    implanting at least one kind of hydrogen ion and rare gas ion through the plurality of SiGe layers, so that an ion implanted layer is formed inside the bond wafer;    closely contacting and bonding a surface of the SiGe layer that is an uppermost layer of the plurality of SiGe layers and a surface of a base wafer, through an insulator film; then    performing delamination at the ion implanted layer;    removing the Si layer and the SiGe layer, in a delaminated layer transferred to a side of the base wafer by the delamination, so that the SiGe layer that is the uppermost layer is exposed; and then    subjecting the exposed SiGe layer to a heat treatment for enriching Ge by thermal oxidation under an oxidizing atmosphere and/or a heat treatment for relaxing lattice strain under a non-oxidizing atmosphere.    
   
   
       14 . The method for producing a semiconductor wafer according to  claim 12 , wherein after performing the heat treatment for enriching Ge and/or the heat treatment for relaxing lattice strain, a Si single crystal layer is epitaxially grown on a surface of the exposed SiGe layer.  
   
   
       15 . The method for producing a semiconductor wafer according to  claim 13 , wherein after performing the heat treatment for enriching Ge and/or the heat treatment for relaxing lattice strain, a Si single crystal layer is epitaxially grown on a surface of the exposed SiGe layer.  
   
   
       16 . The method for producing a semiconductor wafer according to  claim 12 , wherein after the delamination at the ion implanted layer, a heat treatment for enhancing strength of the bonding at a temperature of 800° C. or less under a non-oxidizing atmosphere is performed.  
   
   
       17 . The method for producing a semiconductor wafer according to  claim 13 , wherein after the delamination at the ion implanted layer, a heat treatment for enhancing strength of the bonding at a temperature of 800° C. or less under a non-oxidizing atmosphere is performed.  
   
   
       18 . The method for producing a semiconductor wafer according to  claim 12 , wherein the removal of the Si layer and/or the SiGe layer is performed by at least any one of, polishing, etching, and removal of an oxide film after thermal oxidation at a temperature of 800° C. or less under an oxidizing atmosphere.  
   
   
       19 . The method for producing a semiconductor wafer according to  claim 13 , wherein the removal of the Si layer and/or the SiGe layer is performed by at least any one of, polishing, etching, and removal of an oxide film after thermal oxidation at a temperature of 800° C. or less under an oxidizing atmosphere.  
   
   
       20 . The method for producing a semiconductor wafer according to  claim 12 , wherein before performing the heat treatment for enriching Ge and/or the heat treatment for relaxing lattice strain, an oxide film is formed on a surface of the exposed SiGe layer.  
   
   
       21 . The method for producing a semiconductor wafer according to  claim 13 , wherein before performing the heat treatment for enriching Ge and/or the heat treatment for relaxing lattice strain, an oxide film is formed on a surface of the exposed SiGe layer.  
   
   
       22 . The method for producing a semiconductor wafer according to  claim 12 , wherein a Ge composition in the SiGe layer is 20% or less.  
   
   
       23 . The method for producing a semiconductor wafer according to  claim 13 , wherein a Ge composition in the SiGe layer is 20% or less.  
   
   
       24 . The method for producing a semiconductor wafer according to  claim 12 , wherein the insulator film through which the surface of the SiGe layer and the surface of the base wafer are closely contacted is formed on the surface of the base wafer.  
   
   
       25 . The method for producing a semiconductor wafer according to  claim 13 , wherein the insulator film through which the surface of the SiGe layer and the surface of the base wafer are closely contacted is formed on the surface of the base wafer.  
   
   
       26 . The method for producing a semiconductor wafer according to  claim 12 , wherein the insulator film through which the surface of the SiGe layer and the surface of the base wafer are closely contacted is formed at least on the surface of the SiGe layer at a thickness of 50 nm or less.  
   
   
       27 . The method for producing a semiconductor wafer according to  claim 13 , wherein the insulator film through which the surface of the SiGe layer and the surface of the base wafer are closely contacted is formed at least on the surface of the SiGe layer at a thickness of 50 nm or less.  
   
   
       28 . The method for producing a semiconductor wafer according to  claim 12 , wherein as the base wafer, a silicon-single crystal wafer or an insulator wafer is used.  
   
   
       29 . The method for: producing a semiconductor wafer according to  claim 13 , wherein as the base wafer, a silicon single crystal wafer or an insulator wafer is used.  
   
   
       30 . The method for producing a bonded wafer according to  claim 12 , wherein a temperature in the heat treatment for enriching Ge is 900° C. or more.  
   
   
       31 . The method for producing a bonded wafer according to  claim 13 , wherein a temperature in the heat treatment for enriching Ge is 900° C. or more.