US2007278550A1PendingUtilityA1

Semiconductor device and method for manufacturing the same

Assignee: DENSO CORPPriority: Jun 5, 2006Filed: May 31, 2007Published: Dec 6, 2007

Est. expiryJun 5, 2026(expired)· nominal 20-yr term from priority

H10W 72/07653H10W 74/00H10W 72/884H10W 90/756H10W 90/754H10W 72/871H10W 72/5434H10W 72/5363H10W 72/926H10W 72/952H10W 72/923H10W 72/01908H10W 72/01904H10W 72/60H10W 72/30H10W 72/07637H10W 72/07636H10W 72/07337H10W 72/07336H10W 72/354H10W 72/352H10W 72/381H10W 90/734H10P 72/74H10W 90/764

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References

Claims

Abstract

A semiconductor device includes: a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element. The one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces. The one electrode is coupled with an external circuit through the one of the first and second metallic layers.

Claims

exact text as granted — not AI-modified

1 . A semiconductor device comprising:
 a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and   first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element, wherein   the one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces, and   the one electrode is coupled with an external circuit through the one of the first and second metallic layers.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 the semiconductor element further includes another electrode, which is disposed on the other one of the first and second surfaces,   the another electrode is electrically coupled with the other one of the first and second metallic layers, which is disposed on the other one of the first and second surfaces, and   the another electrode is coupled with the external circuit through the other one of the first and second metallic layers.   
     
     
         3 . The semiconductor device according to  claim 2 , further comprising:
 a conductive member extending from the first metallic layer to the second metallic layer so that the first metallic layer is electrically coupled with the second metallic layer through the conductive member.   
     
     
         4 . The semiconductor device according to  claim 2 , wherein
 the semiconductor element includes a conductive portion for electrically connecting between the first and second surfaces, and   the first metallic layer is electrically coupled with the second metallic layer through the conductive portion.   
     
     
         5 . The semiconductor device according to  claim 1 , further comprising:
 a resin member, wherein   the one electrode includes a plurality of electrode terminals, which provides a predetermined arrangement pattern,   the one of the first and second metallic layers includes a plurality of divided portions, which provide an arrangement pattern corresponding to the predetermined arrangement pattern of the plurality of electrode terminals, and   the resin member seals a clearance between the plurality of divided portions.   
     
     
         6 . The semiconductor device according to  claim 1 , wherein
 the one electrode is electrically coupled with the one of the first and second metallic layers through a conductive connection member disposed therebetween.   
     
     
         7 . The semiconductor device according to  claim 1 , wherein
 the one of the first and second metallic layers is made of a metallic plating film disposed on the one electrode.   
     
     
         8 . The semiconductor device according to  claim 1 , wherein
 the first metallic layer has a first thickness, which is equal to or smaller than a thickness of the semiconductor element, and   the second metallic layer has a second thickness, which is equal to or smaller than the thickness of the semiconductor element.   
     
     
         9 . The semiconductor device according to  claim 1 , wherein
 the first and second metallic layers are made of a same material, and   the first and second metallic layers have substantially a same thickness.   
     
     
         10 . The semiconductor device according to  claim 1 , further comprising:
 a resin member having electrically insulating property, wherein   the semiconductor element has a periphery edge, which is disposed between periphery edges of the first and second metallic layers, and   the resin member seals the periphery edge of the semiconductor element.   
     
     
         11 . The semiconductor device according to  claim 1 , further comprising:
 a resin member disposed on whole circumference of a periphery edge of one of the first and second metallic layers, wherein   the periphery edge of the one of the first and second metallic layers is disposed on a periphery edge of the semiconductor element, and   the resin member reinforces a connection between the one of the first and second metallic layers and the semiconductor element.   
     
     
         12 . The semiconductor device according to  claim 11 , further comprising:
 another resin member disposed on whole circumference of a periphery edge of the other one of the first and second metallic layers, wherein   the periphery edge of the other one of the first and second metallic layers is disposed on the periphery edge of the semiconductor element, and   the another resin member reinforces a connection between the other one of the first and second metallic layers and the semiconductor element.   
     
     
         13 . The semiconductor device according to  claim 1 , wherein
 one of the first and second metallic layers has an outer surface, which is opposite to the semiconductor element, and   the outer surface has a fin shape.   
     
     
         14 . The semiconductor device according to  claim 1 , wherein
 the first metallic layer has a first planar area perpendicular to the semiconductor element,   the first planar area is equal to or smaller than a planar area of the semiconductor element,   the second metallic layer has a second planar area perpendicular to the semiconductor element, and   the second planar area is equal to or smaller than the planar area of the semiconductor element.   
     
     
         15 . A semiconductor device comprising:
 a semiconductor element having first and second surfaces, wherein the semiconductor element has a electrode, which is disposed on the first surface; and   a first metallic layer disposed on the first surface of the semiconductor element, wherein   the electrode is electrically coupled with the first metallic layer so that the electrode is coupled with an external circuit through the first metallic layer.   
     
     
         16 . The semiconductor device according to  claim 15 , wherein
 the first metallic layer is electrically coupled with both of the first and second surfaces.   
     
     
         17 . The semiconductor device according to  claim 15 , wherein
 the first metallic layer is electrically coupled with only the first surface.   
     
     
         18 . The semiconductor device according to  claim 17 , further comprising:
 a conductive member extending from the first surface to the second surface, wherein   the first metallic layer is electrically coupled with the second surface through the conductive member disposed therebetween.   
     
     
         19 . The semiconductor device according to  claim 17 , wherein
 the semiconductor element includes a conductive portion for electrically connecting between the first and second surfaces, and   the first metallic layer is electrically coupled with the second surface through the conductive portion.   
     
     
         20 . The semiconductor device according to  claim 17 , further comprising:
 a resin member having electrically insulating property, wherein   the semiconductor element has a periphery edge, which is disposed on a periphery edge of the first metallic layer, and   the resin member seals both of the periphery edges of the semiconductor element and the first metallic layer.   
     
     
         21 . The semiconductor device according to  claim 15 , wherein
 the first metallic layer has a planar area, which is perpendicular to the semiconductor element, and   the planar area of the first metallic layer is equal to or smaller than a planar area of the semiconductor element.   
     
     
         22 . A method for manufacturing a semiconductor device comprising:
 preparing a semiconductor wafer having a plurality of semiconductor elements, wherein each semiconductor element includes at least one electrode, which is disposed on one of first and second surfaces of the semiconductor element;   forming first and second metallic layers on first and second surfaces of the semiconductor wafer, respectively; and   dividing the semiconductor wafer together with the first and second metallic layers into a plurality of semiconductor element chips.   
     
     
         23 . The method according to  claim 22 , wherein
 the one electrode includes a plurality of electrode terminals, which provides a predetermined arrangement pattern,   one of the first and second metallic layers is disposed on the one of the first and second surfaces,   the one of the first and second metallic layers includes a plurality of divided portions, which provide an arrangement pattern corresponding to the predetermined arrangement pattern of the plurality of electrode terminals, and   the forming the first and second metallic layers includes connecting the plurality of divided portions to the one of first and second surfaces,   the method further comprising:   sealing a clearance between the plurality of divided portions with a resin member.   
     
     
         24 . The method according to  claim 23 , wherein
 the connecting the plurality of divided portions includes:
 preparing a plate member for providing the one of the first and second metallic layers; 
 forming a concavity on one surface of the plate member to provide the arrangement pattern of the plurality of divided portions, wherein the concavity does not penetrate the plate member; 
 connecting the one surface of the plate member to the semiconductor wafer; and 
 removing a bottom of the concavity so that the concavity is opened to the other one surface of the plate member. 
   
     
     
         25 . The method according to  claim 23 , wherein
 the connecting the plurality of divided portions includes:
 fixing the plurality of divided portions to a film member integrally; 
 connecting the film member together with the plurality of divided portions to the semiconductor wafer; and 
 removing the film member from the plurality of divided portions.

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